JPS57160993A - Heteroepitaxial growing method - Google Patents

Heteroepitaxial growing method

Info

Publication number
JPS57160993A
JPS57160993A JP4416481A JP4416481A JPS57160993A JP S57160993 A JPS57160993 A JP S57160993A JP 4416481 A JP4416481 A JP 4416481A JP 4416481 A JP4416481 A JP 4416481A JP S57160993 A JPS57160993 A JP S57160993A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
silicon
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4416481A
Other languages
Japanese (ja)
Other versions
JPS6229397B2 (en
Inventor
Makoto Ishida
Tetsuo Nakamura
Yukio Yasuda
Shiyou Nishinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP4416481A priority Critical patent/JPS57160993A/en
Publication of JPS57160993A publication Critical patent/JPS57160993A/en
Publication of JPS6229397B2 publication Critical patent/JPS6229397B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a single crystal film of high quality by sticking a polycrystalline or amorphous film made of the same substance as the substance of a single crystal film to be grown on a substrate and by heteroepitaxially growing said single crystal film on the substrate.
CONSTITUTION: For example, in the manufacture of SOS (silicon-on-sapphire), amorphous silicon is first deposited on a sapphire substrate by a sputtering method. The substrate is shifted to a CVD apparatus, where the amorphous silicon is converted into a polycrystalline silicon film by high frequency heating. A gaseous mixture of gaseous H2 with gaseous SiH4 is then introduced into the apparatus at about 950W1,050°C to heteroepitaxially grow a single crystal silicon film on the polycrystalline silicon film.
COPYRIGHT: (C)1982,JPO&Japio
JP4416481A 1981-03-27 1981-03-27 Heteroepitaxial growing method Granted JPS57160993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4416481A JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4416481A JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Publications (2)

Publication Number Publication Date
JPS57160993A true JPS57160993A (en) 1982-10-04
JPS6229397B2 JPS6229397B2 (en) 1987-06-25

Family

ID=12683947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4416481A Granted JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Country Status (1)

Country Link
JP (1) JPS57160993A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751963B2 (en) † 1992-06-10 1998-05-18 日亜化学工業株式会社 Method for growing indium gallium nitride semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430872A (en) * 1977-08-12 1979-03-07 Hope Henry F Device of measuring area of slender strip material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430872A (en) * 1977-08-12 1979-03-07 Hope Henry F Device of measuring area of slender strip material

Also Published As

Publication number Publication date
JPS6229397B2 (en) 1987-06-25

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