JPS57160993A - Heteroepitaxial growing method - Google Patents

Heteroepitaxial growing method

Info

Publication number
JPS57160993A
JPS57160993A JP4416481A JP4416481A JPS57160993A JP S57160993 A JPS57160993 A JP S57160993A JP 4416481 A JP4416481 A JP 4416481A JP 4416481 A JP4416481 A JP 4416481A JP S57160993 A JPS57160993 A JP S57160993A
Authority
JP
Japan
Prior art keywords
film
single crystal
substrate
silicon
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4416481A
Other languages
Japanese (ja)
Other versions
JPS6229397B2 (en
Inventor
Makoto Ishida
Tetsuo Nakamura
Yukio Yasuda
Shiyou Nishinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP4416481A priority Critical patent/JPS57160993A/en
Publication of JPS57160993A publication Critical patent/JPS57160993A/en
Publication of JPS6229397B2 publication Critical patent/JPS6229397B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To form a single crystal film of high quality by sticking a polycrystalline or amorphous film made of the same substance as the substance of a single crystal film to be grown on a substrate and by heteroepitaxially growing said single crystal film on the substrate.
CONSTITUTION: For example, in the manufacture of SOS (silicon-on-sapphire), amorphous silicon is first deposited on a sapphire substrate by a sputtering method. The substrate is shifted to a CVD apparatus, where the amorphous silicon is converted into a polycrystalline silicon film by high frequency heating. A gaseous mixture of gaseous H2 with gaseous SiH4 is then introduced into the apparatus at about 950W1,050°C to heteroepitaxially grow a single crystal silicon film on the polycrystalline silicon film.
COPYRIGHT: (C)1982,JPO&Japio
JP4416481A 1981-03-27 1981-03-27 Heteroepitaxial growing method Granted JPS57160993A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4416481A JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4416481A JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Publications (2)

Publication Number Publication Date
JPS57160993A true JPS57160993A (en) 1982-10-04
JPS6229397B2 JPS6229397B2 (en) 1987-06-25

Family

ID=12683947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4416481A Granted JPS57160993A (en) 1981-03-27 1981-03-27 Heteroepitaxial growing method

Country Status (1)

Country Link
JP (1) JPS57160993A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2751963B2 (en) † 1992-06-10 1998-05-18 日亜化学工業株式会社 Method for growing indium gallium nitride semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430872A (en) * 1977-08-12 1979-03-07 Hope Henry F Device of measuring area of slender strip material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430872A (en) * 1977-08-12 1979-03-07 Hope Henry F Device of measuring area of slender strip material

Also Published As

Publication number Publication date
JPS6229397B2 (en) 1987-06-25

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
EP0285358A3 (en) Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
EP0253611A3 (en) Method of epitaxially growing gallium arsenide on silicon
JPS6432622A (en) Formation of soi film
JPS57160993A (en) Heteroepitaxial growing method
JPS56160400A (en) Growing method for gallium nitride
JPS54157779A (en) Production of silicon single crystal
EP0355833A3 (en) Method of producing compound semiconductor single crystal
JPS5659700A (en) Forming method for gallium nitride single crystal thin film
JPS53108766A (en) Vapor phase growth method of sos film
JPS5469062A (en) Vapor growth method for magnespinel
JPS54152465A (en) Manufacture of epitaxial wafer
JPS54106081A (en) Growth method in vapor phase
JPS57200291A (en) Vapor-phase growing method of compound semiconductor
JPS57196794A (en) Epitaxial growth method
JPS5461463A (en) Vapor phase growth method for semiconductor
JPS5571696A (en) Vapor phase epitaxial growing device
KR940014929A (en) How to grow gallium arsenide on porous silicon substrate
JPS5553415A (en) Selective epitaxial growing
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS5727999A (en) Vapor phase growing method for gan
JPS6411321A (en) Manufacture of silicon single-crystal thin film
JPS57194519A (en) Method of crystal growth
ERSTFELD Method for the preparation of epitaxial films of mercury cadmium telluride[Patent]
JPS54139467A (en) Method and apparatus for vapor epitaxial growth