JPS55136198A - Epitaxial layer growing method - Google Patents
Epitaxial layer growing methodInfo
- Publication number
- JPS55136198A JPS55136198A JP4349779A JP4349779A JPS55136198A JP S55136198 A JPS55136198 A JP S55136198A JP 4349779 A JP4349779 A JP 4349779A JP 4349779 A JP4349779 A JP 4349779A JP S55136198 A JPS55136198 A JP S55136198A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- epitaxial layer
- press
- layer
- amt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make an etching amt. more uniform as compared to a conventional method and reduce a circuit defect, etc. of a semiconductor device after epitaxial growth by etching a semiconductor single crystal substrate in vapor phase under reduced press. and growing an epitaxial layer under ordinary or elevated press.
CONSTITUTION: When an epitaxial layer is formed on a semiconductor single crystal substrate, after etching the substrate in vapor phase under reduced press. the layer is grown under ordinary or elevated press. By etching the substrate under reduced press. the etching amt. is made more uniform as compared to a conventional method, and a uniform epitaxial layer can be grown. This method is effective in epitaxial growth of a semiconductor device having a buried diffused layer, e.g., a bipolar type semiconductor integrated circuit device, and it prevents a circuit defect, etc. resulting from shallowing of the buried layer due to lack of uniformity in etching amt.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4349779A JPS55136198A (en) | 1979-04-10 | 1979-04-10 | Epitaxial layer growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4349779A JPS55136198A (en) | 1979-04-10 | 1979-04-10 | Epitaxial layer growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55136198A true JPS55136198A (en) | 1980-10-23 |
Family
ID=12665341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4349779A Pending JPS55136198A (en) | 1979-04-10 | 1979-04-10 | Epitaxial layer growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55136198A (en) |
-
1979
- 1979-04-10 JP JP4349779A patent/JPS55136198A/en active Pending
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