JPS5673696A - Vapor phase growing method - Google Patents
Vapor phase growing methodInfo
- Publication number
- JPS5673696A JPS5673696A JP15120979A JP15120979A JPS5673696A JP S5673696 A JPS5673696 A JP S5673696A JP 15120979 A JP15120979 A JP 15120979A JP 15120979 A JP15120979 A JP 15120979A JP S5673696 A JPS5673696 A JP S5673696A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- substrate
- electrically conductive
- conductive type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a steep impurity step distribution between a substrate and a grown layer by reversing the electrically conductive type of an impurity to be added in the early stage of growth twice or more to make compensation for each other when an epitaxial layer is grown on a base crystal of the 1st electrically conductive type and the 1st impurity concn. in a vapor phase.
CONSTITUTION: When a layer is epitaxially grown on a semiconductor substrate of the 1st electrically conductive type and the 1st impurity concn. at a predetermined concn. of an impurity equal or opposite to the substrate in electrically conductive type, the impurity concn. distribution on the interface between the substrate and grown layer is made gentle owing to solid diffusion from the substrate and autodoping, and a desired distribution is not obtd. By reversing the electrically conductive type of an impurity to be added in the early stage of growth at least twice to make compensation for each other in a layer part contacting with the substrate, the occurrence of solid diffusion and autodoping is prevented. Thus, a desired steep impurity distribution is obtd. on the interface between the substrate and grown layer.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15120979A JPS5673696A (en) | 1979-11-20 | 1979-11-20 | Vapor phase growing method |
| US06/388,198 US4479845A (en) | 1979-11-20 | 1982-06-14 | Vapor growth with monitoring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15120979A JPS5673696A (en) | 1979-11-20 | 1979-11-20 | Vapor phase growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5673696A true JPS5673696A (en) | 1981-06-18 |
Family
ID=15513614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15120979A Pending JPS5673696A (en) | 1979-11-20 | 1979-11-20 | Vapor phase growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5673696A (en) |
-
1979
- 1979-11-20 JP JP15120979A patent/JPS5673696A/en active Pending
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