JPS52152164A - Epitaxial wafer of group iii-v compound - Google Patents

Epitaxial wafer of group iii-v compound

Info

Publication number
JPS52152164A
JPS52152164A JP7003276A JP7003276A JPS52152164A JP S52152164 A JPS52152164 A JP S52152164A JP 7003276 A JP7003276 A JP 7003276A JP 7003276 A JP7003276 A JP 7003276A JP S52152164 A JPS52152164 A JP S52152164A
Authority
JP
Japan
Prior art keywords
group iii
compound
epitaxial wafer
wafers
high quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7003276A
Other languages
Japanese (ja)
Other versions
JPS5633852B2 (en
Inventor
Shinichi Akai
Hideki Mori
Takashi Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP7003276A priority Critical patent/JPS52152164A/en
Publication of JPS52152164A publication Critical patent/JPS52152164A/en
Publication of JPS5633852B2 publication Critical patent/JPS5633852B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To produce high quality epi wafers by adding Si at a specified concentration and epitaxially growing a group III-V compound semiconductor on GaP wafers of less than 5 × 104 cm-2 in dislocation density by an LEC method.
COPYRIGHT: (C)1977,JPO&Japio
JP7003276A 1976-06-14 1976-06-14 Epitaxial wafer of group iii-v compound Granted JPS52152164A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7003276A JPS52152164A (en) 1976-06-14 1976-06-14 Epitaxial wafer of group iii-v compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7003276A JPS52152164A (en) 1976-06-14 1976-06-14 Epitaxial wafer of group iii-v compound

Publications (2)

Publication Number Publication Date
JPS52152164A true JPS52152164A (en) 1977-12-17
JPS5633852B2 JPS5633852B2 (en) 1981-08-06

Family

ID=13419836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7003276A Granted JPS52152164A (en) 1976-06-14 1976-06-14 Epitaxial wafer of group iii-v compound

Country Status (1)

Country Link
JP (1) JPS52152164A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105625A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density
JPH05110137A (en) * 1991-10-15 1993-04-30 Shin Etsu Handotai Co Ltd Gap red light-emitting element

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6182618A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS6182622A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS6182621A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS6182623A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS6182617A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS6182620A (en) * 1984-08-31 1986-04-26 株式会社山武 Leaf switch
JPS61104935U (en) * 1984-12-14 1986-07-03
JPS62175625U (en) * 1986-04-26 1987-11-07
JPH0682733U (en) * 1990-12-29 1994-11-25 山武ハネウエル株式会社 Leaf switch
JPH0682734U (en) * 1990-12-29 1994-11-25 山武ハネウエル株式会社 Leaf switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56105625A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density
JPH05110137A (en) * 1991-10-15 1993-04-30 Shin Etsu Handotai Co Ltd Gap red light-emitting element

Also Published As

Publication number Publication date
JPS5633852B2 (en) 1981-08-06

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