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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP6870776ApriorityCriticalpatent/JPS52152163A/en
Publication of JPS52152163ApublicationCriticalpatent/JPS52152163A/en
PURPOSE: To flatten the carrier concentration of an epitaxially grown operating layer by placing GaAs doped with S at a high concentration between a Ga source and GaAs wafers in a reaction tube.