JPS53126866A - Production of semiconductor wafers - Google Patents
Production of semiconductor wafersInfo
- Publication number
- JPS53126866A JPS53126866A JP4144877A JP4144877A JPS53126866A JP S53126866 A JPS53126866 A JP S53126866A JP 4144877 A JP4144877 A JP 4144877A JP 4144877 A JP4144877 A JP 4144877A JP S53126866 A JPS53126866 A JP S53126866A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor wafers
- finishing
- mirror
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a substrate suitable for epitaxial growth of high performance by providing a vapor grown layer of the same material as that of wafer on the back and side faces while letting work distortions be remained on the back and mirror-finishing the main surface at the time of performing mirror-finishing of the main face of a semiconductor wafer.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4144877A JPS53126866A (en) | 1977-04-13 | 1977-04-13 | Production of semiconductor wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4144877A JPS53126866A (en) | 1977-04-13 | 1977-04-13 | Production of semiconductor wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53126866A true JPS53126866A (en) | 1978-11-06 |
Family
ID=12608645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4144877A Pending JPS53126866A (en) | 1977-04-13 | 1977-04-13 | Production of semiconductor wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53126866A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150237A (en) * | 1979-05-11 | 1980-11-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Silicon monocrystalline wafer |
JPS5618412A (en) * | 1979-07-25 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor element |
JPS5762538A (en) * | 1980-10-01 | 1982-04-15 | Nec Corp | Manufacture of semiconductor device |
JPS58191422A (en) * | 1982-05-04 | 1983-11-08 | Nec Corp | Manufacture of semiconductor device |
JPH04267339A (en) * | 1991-02-21 | 1992-09-22 | Toshiba Corp | Semiconductor substrate and its manufacture |
JPH06338506A (en) * | 1993-05-28 | 1994-12-06 | Nec Corp | Semiconductor substrate and manufacture thereof |
JP2005175251A (en) * | 2003-12-12 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Semiconductor wafer and manufacturing method thereof |
-
1977
- 1977-04-13 JP JP4144877A patent/JPS53126866A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55150237A (en) * | 1979-05-11 | 1980-11-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Silicon monocrystalline wafer |
JPS5618412A (en) * | 1979-07-25 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor element |
JPS5762538A (en) * | 1980-10-01 | 1982-04-15 | Nec Corp | Manufacture of semiconductor device |
JPS613090B2 (en) * | 1980-10-01 | 1986-01-30 | Nippon Electric Co | |
JPS58191422A (en) * | 1982-05-04 | 1983-11-08 | Nec Corp | Manufacture of semiconductor device |
JPH04267339A (en) * | 1991-02-21 | 1992-09-22 | Toshiba Corp | Semiconductor substrate and its manufacture |
JPH06338506A (en) * | 1993-05-28 | 1994-12-06 | Nec Corp | Semiconductor substrate and manufacture thereof |
JP2005175251A (en) * | 2003-12-12 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Semiconductor wafer and manufacturing method thereof |
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