JPS53126866A - Production of semiconductor wafers - Google Patents

Production of semiconductor wafers

Info

Publication number
JPS53126866A
JPS53126866A JP4144877A JP4144877A JPS53126866A JP S53126866 A JPS53126866 A JP S53126866A JP 4144877 A JP4144877 A JP 4144877A JP 4144877 A JP4144877 A JP 4144877A JP S53126866 A JPS53126866 A JP S53126866A
Authority
JP
Japan
Prior art keywords
production
semiconductor wafers
finishing
mirror
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4144877A
Other languages
Japanese (ja)
Inventor
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4144877A priority Critical patent/JPS53126866A/en
Publication of JPS53126866A publication Critical patent/JPS53126866A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a substrate suitable for epitaxial growth of high performance by providing a vapor grown layer of the same material as that of wafer on the back and side faces while letting work distortions be remained on the back and mirror-finishing the main surface at the time of performing mirror-finishing of the main face of a semiconductor wafer.
COPYRIGHT: (C)1978,JPO&Japio
JP4144877A 1977-04-13 1977-04-13 Production of semiconductor wafers Pending JPS53126866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4144877A JPS53126866A (en) 1977-04-13 1977-04-13 Production of semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4144877A JPS53126866A (en) 1977-04-13 1977-04-13 Production of semiconductor wafers

Publications (1)

Publication Number Publication Date
JPS53126866A true JPS53126866A (en) 1978-11-06

Family

ID=12608645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4144877A Pending JPS53126866A (en) 1977-04-13 1977-04-13 Production of semiconductor wafers

Country Status (1)

Country Link
JP (1) JPS53126866A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150237A (en) * 1979-05-11 1980-11-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon monocrystalline wafer
JPS5618412A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
JPS5762538A (en) * 1980-10-01 1982-04-15 Nec Corp Manufacture of semiconductor device
JPS58191422A (en) * 1982-05-04 1983-11-08 Nec Corp Manufacture of semiconductor device
JPH04267339A (en) * 1991-02-21 1992-09-22 Toshiba Corp Semiconductor substrate and its manufacture
JPH06338506A (en) * 1993-05-28 1994-12-06 Nec Corp Semiconductor substrate and manufacture thereof
JP2005175251A (en) * 2003-12-12 2005-06-30 Matsushita Electric Ind Co Ltd Semiconductor wafer and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150237A (en) * 1979-05-11 1980-11-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Silicon monocrystalline wafer
JPS5618412A (en) * 1979-07-25 1981-02-21 Fujitsu Ltd Manufacture of semiconductor element
JPS5762538A (en) * 1980-10-01 1982-04-15 Nec Corp Manufacture of semiconductor device
JPS613090B2 (en) * 1980-10-01 1986-01-30 Nippon Electric Co
JPS58191422A (en) * 1982-05-04 1983-11-08 Nec Corp Manufacture of semiconductor device
JPH04267339A (en) * 1991-02-21 1992-09-22 Toshiba Corp Semiconductor substrate and its manufacture
JPH06338506A (en) * 1993-05-28 1994-12-06 Nec Corp Semiconductor substrate and manufacture thereof
JP2005175251A (en) * 2003-12-12 2005-06-30 Matsushita Electric Ind Co Ltd Semiconductor wafer and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPS53126866A (en) Production of semiconductor wafers
JPS5356972A (en) Mesa type semiconductor device
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS5271171A (en) Production of epitaxial wafer
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS52152184A (en) Semiconductor device
JPS53115181A (en) Production of semiconductor device
JPS5328374A (en) Wafer production
JPS53146299A (en) Production of silicon carbide substrate
JPS5412261A (en) Semiconductor wafer
JPS53143163A (en) Epitaxial growth method
JPS5440575A (en) Semiconductor device
JPS5376760A (en) Semiconductor rectifying device
JPS5294069A (en) Process for preparing semi-conductor substrate
JPS51111057A (en) Crystal growing device
JPS5311574A (en) Production of semiconductor device
JPS5467765A (en) Production of semiconductor device of gallium arsenide
JPS53131765A (en) Production of semiconductor device
JPS52109866A (en) Liquid epitaxial growing method
JPS5286775A (en) Bebeling method for semiconductor substrate
JPS51140474A (en) Method of fabricating semiconductor crystal
JPS5244163A (en) Process for productin of semiconductor element
JPS51117882A (en) Semiconductor device manufacturing method
JPS53123660A (en) Epitaxial growth method
JPS5230173A (en) Manufacturing method of semiconductor element