JPS56133820A - Vapor epitaxial growth of arsenic gallium - Google Patents

Vapor epitaxial growth of arsenic gallium

Info

Publication number
JPS56133820A
JPS56133820A JP3718280A JP3718280A JPS56133820A JP S56133820 A JPS56133820 A JP S56133820A JP 3718280 A JP3718280 A JP 3718280A JP 3718280 A JP3718280 A JP 3718280A JP S56133820 A JPS56133820 A JP S56133820A
Authority
JP
Japan
Prior art keywords
buffer layer
substrate
carrier concentration
layer
reproducibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3718280A
Other languages
Japanese (ja)
Inventor
Kuniaki Konno
Hirokuni Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3718280A priority Critical patent/JPS56133820A/en
Publication of JPS56133820A publication Critical patent/JPS56133820A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the reproducibility of carrier concentration distribution by growing a buffer layer on a Ga As substrate wherein gas etching is applied to the buffer layer unitl the atmosphere requiring for further processes becomes regular status than an active layer is grown. CONSTITUTION:A semi-insulating GaAs layer is arranged in a reaction tube and a GaAs buffer layer (a carrier concentration of 10<12>-10<13>cm<-13>) is grown by the reaction with GaCl and As vapor. Next, gas etching is applied to the surface of the buffer layer until the atmosphere becomes regular status by inducing H2S as doping gas and by simultaneously moving a substrate to a high-temperature region and epitaxial growth is applied to the active layer by moving the substrate to a low-temperature region after arriving at the regular status. In this way, the carrier concentration distribution at the interface between the buffer layer and the active layer can rapidly be obtained with good reproducibility. Therefore, the characteristics and reproducibility of a GaAs FET will be improved.
JP3718280A 1980-03-24 1980-03-24 Vapor epitaxial growth of arsenic gallium Pending JPS56133820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3718280A JPS56133820A (en) 1980-03-24 1980-03-24 Vapor epitaxial growth of arsenic gallium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3718280A JPS56133820A (en) 1980-03-24 1980-03-24 Vapor epitaxial growth of arsenic gallium

Publications (1)

Publication Number Publication Date
JPS56133820A true JPS56133820A (en) 1981-10-20

Family

ID=12490439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3718280A Pending JPS56133820A (en) 1980-03-24 1980-03-24 Vapor epitaxial growth of arsenic gallium

Country Status (1)

Country Link
JP (1) JPS56133820A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235577A (en) * 1985-08-08 1987-02-16 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235577A (en) * 1985-08-08 1987-02-16 Fujitsu Ltd Manufacture of semiconductor device

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