JPS6442879A - Manufacture of semiconductor light-emitting element - Google Patents
Manufacture of semiconductor light-emitting elementInfo
- Publication number
- JPS6442879A JPS6442879A JP19942687A JP19942687A JPS6442879A JP S6442879 A JPS6442879 A JP S6442879A JP 19942687 A JP19942687 A JP 19942687A JP 19942687 A JP19942687 A JP 19942687A JP S6442879 A JPS6442879 A JP S6442879A
- Authority
- JP
- Japan
- Prior art keywords
- inp
- type
- stopping layer
- saturation
- current stopping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To realize an internal current constriction type semiconductor light- emitting element high in reproducibility and performance in a single crystal growing process by a method wherein a part of a current stopping layer formed on a substrate mounted with a mesa is converted into the P type by diffusion in a just saturation melt process. CONSTITUTION:For conversion of an N-InP current stopping layer 3 into the P type, a high-concentration just saturation P-InP melt process is resorted to for impurity diffusion. The high-concentration just saturation P-InP melt process is high in controllability in converting a part of the N-InP current stopping layer 3 into the P-type, and will not be a source of impurity atoms that may contaminate an active layer 6 because there will hardly be crystal growth on a wafer. As the result, carrier concentrations may be set as desired for the N-InP current stopping layer 3 and a P-InP clad layer 5, which ensures easy optimization for devices. This means that an internal current constriction type LED highly efficient in surface emission may be constructed in one crystal growth process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19942687A JPS6442879A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19942687A JPS6442879A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442879A true JPS6442879A (en) | 1989-02-15 |
Family
ID=16407614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19942687A Pending JPS6442879A (en) | 1987-08-10 | 1987-08-10 | Manufacture of semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442879A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6549553B1 (en) | 1998-02-25 | 2003-04-15 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
-
1987
- 1987-08-10 JP JP19942687A patent/JPS6442879A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6549553B1 (en) | 1998-02-25 | 2003-04-15 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| US6846685B2 (en) | 1998-02-25 | 2005-01-25 | Nippon Telegraph And Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
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