JPS5453974A - Manufacture for gallium phosphide green light emitting element - Google Patents
Manufacture for gallium phosphide green light emitting elementInfo
- Publication number
- JPS5453974A JPS5453974A JP12003577A JP12003577A JPS5453974A JP S5453974 A JPS5453974 A JP S5453974A JP 12003577 A JP12003577 A JP 12003577A JP 12003577 A JP12003577 A JP 12003577A JP S5453974 A JPS5453974 A JP S5453974A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- atomosphere
- type gap
- donor
- light emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To increase the light emission efficiency, by reducing the donor concentration of n type GaP on the n type GaP substrate toward growing direction, and by taking high concentration at the pn junction for the concentration of the center of illumination (N).
CONSTITUTION: When Ga is molten with temperature risen under H2 atomosphere in the quartz made reaction furnace, the surface of the furnace is reduced with H, Si is mixed with high concentration in Ga molten liquid, and the epitaxial layer added by high concentration Si on the n type GaP substrate is grown until the atomosphere is selected to Ar. Since SO2 absorbed on the boat is exhausted with reduction by H2, the donor is mainly Si. The growing at the latter half is made under Ar atomosphere including NH3, a lot of N2 is filled to Ga molten liquid, Si is decreased by making stable compound with the Si partly molten, and the donor concentration is decreased by S starting to solve from the n type GaP substrate. The N concentration of impurity at the center of light emission is increased since N is easily entered because of low donor concentration, and it is not flown from the Ga molten liquid because of Ar atomosphere. Thus, the light emission efficiency can be increased
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12003577A JPS5453974A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12003577A JPS5453974A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5453974A true JPS5453974A (en) | 1979-04-27 |
JPS5753993B2 JPS5753993B2 (en) | 1982-11-16 |
Family
ID=14776284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12003577A Granted JPS5453974A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5453974A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05110137A (en) * | 1991-10-15 | 1993-04-30 | Shin Etsu Handotai Co Ltd | Gap red light-emitting element |
US5652178A (en) * | 1989-04-28 | 1997-07-29 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode using LPE at different temperatures |
US5707891A (en) * | 1989-04-28 | 1998-01-13 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode |
US6479312B1 (en) | 1999-10-29 | 2002-11-12 | Shin-Etsu Handotai Co., Ltd. | Gallium phosphide luminescent device |
-
1977
- 1977-10-07 JP JP12003577A patent/JPS5453974A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652178A (en) * | 1989-04-28 | 1997-07-29 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode using LPE at different temperatures |
US5707891A (en) * | 1989-04-28 | 1998-01-13 | Sharp Kabushiki Kaisha | Method of manufacturing a light emitting diode |
JPH05110137A (en) * | 1991-10-15 | 1993-04-30 | Shin Etsu Handotai Co Ltd | Gap red light-emitting element |
US6479312B1 (en) | 1999-10-29 | 2002-11-12 | Shin-Etsu Handotai Co., Ltd. | Gallium phosphide luminescent device |
Also Published As
Publication number | Publication date |
---|---|
JPS5753993B2 (en) | 1982-11-16 |
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