JPS5453974A - Manufacture for gallium phosphide green light emitting element - Google Patents

Manufacture for gallium phosphide green light emitting element

Info

Publication number
JPS5453974A
JPS5453974A JP12003577A JP12003577A JPS5453974A JP S5453974 A JPS5453974 A JP S5453974A JP 12003577 A JP12003577 A JP 12003577A JP 12003577 A JP12003577 A JP 12003577A JP S5453974 A JPS5453974 A JP S5453974A
Authority
JP
Japan
Prior art keywords
concentration
atomosphere
type gap
donor
light emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12003577A
Other languages
Japanese (ja)
Other versions
JPS5753993B2 (en
Inventor
Masami Iwamoto
Makoto Tashiro
Tatsuro Beppu
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12003577A priority Critical patent/JPS5453974A/en
Publication of JPS5453974A publication Critical patent/JPS5453974A/en
Publication of JPS5753993B2 publication Critical patent/JPS5753993B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To increase the light emission efficiency, by reducing the donor concentration of n type GaP on the n type GaP substrate toward growing direction, and by taking high concentration at the pn junction for the concentration of the center of illumination (N).
CONSTITUTION: When Ga is molten with temperature risen under H2 atomosphere in the quartz made reaction furnace, the surface of the furnace is reduced with H, Si is mixed with high concentration in Ga molten liquid, and the epitaxial layer added by high concentration Si on the n type GaP substrate is grown until the atomosphere is selected to Ar. Since SO2 absorbed on the boat is exhausted with reduction by H2, the donor is mainly Si. The growing at the latter half is made under Ar atomosphere including NH3, a lot of N2 is filled to Ga molten liquid, Si is decreased by making stable compound with the Si partly molten, and the donor concentration is decreased by S starting to solve from the n type GaP substrate. The N concentration of impurity at the center of light emission is increased since N is easily entered because of low donor concentration, and it is not flown from the Ga molten liquid because of Ar atomosphere. Thus, the light emission efficiency can be increased
COPYRIGHT: (C)1979,JPO&Japio
JP12003577A 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element Granted JPS5453974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12003577A JPS5453974A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12003577A JPS5453974A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Publications (2)

Publication Number Publication Date
JPS5453974A true JPS5453974A (en) 1979-04-27
JPS5753993B2 JPS5753993B2 (en) 1982-11-16

Family

ID=14776284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12003577A Granted JPS5453974A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Country Status (1)

Country Link
JP (1) JPS5453974A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05110137A (en) * 1991-10-15 1993-04-30 Shin Etsu Handotai Co Ltd Gap red light-emitting element
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
US5707891A (en) * 1989-04-28 1998-01-13 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode
JPH05110137A (en) * 1991-10-15 1993-04-30 Shin Etsu Handotai Co Ltd Gap red light-emitting element
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Also Published As

Publication number Publication date
JPS5753993B2 (en) 1982-11-16

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