JPS5453975A - Manufacture for gallium phosphide green light emitting element - Google Patents
Manufacture for gallium phosphide green light emitting elementInfo
- Publication number
- JPS5453975A JPS5453975A JP12003677A JP12003677A JPS5453975A JP S5453975 A JPS5453975 A JP S5453975A JP 12003677 A JP12003677 A JP 12003677A JP 12003677 A JP12003677 A JP 12003677A JP S5453975 A JPS5453975 A JP S5453975A
- Authority
- JP
- Japan
- Prior art keywords
- growing
- concentration
- quartz
- donor
- light emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To increase the light emitting efficiency, by lowering the donor concentration of the n type GaP on the n type GaP substrate near the pn junction through the use of quartz-made unit for the most part contacted with Ga molten liquid, and by filling the impurity of light emission center of high concentration.
CONSTITUTION: First, under H2 atomosphere, the growing boat and reaction tube made of quartz is reduced by H, Si is mixed in Ga molten liquid in high concentration, the absorbed SO2 is reduced by H and exhausted, and the donor of GaP growing is constituted with Si. The growing for the latter half is made under H2 atomosphere including NH3, a lot of N2 is added to Ga molten liquid and it is compounded stably with Si partly molten, Si is reduced in amount and S filled to the substrate crystal is taken major role, and the donor concentration at the growing layer is decreased. The N atoms of impurity of light emission center are easily entered and the concentration is increased conversely. Accordingly, the light emission efficiency is increased. Since the growing boat and furnace are made of quartz, the inversion of n layer around the pn junction lower in the donor concentration is not caused and the concentration control can be made with excellent reproducibility
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12003677A JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12003677A JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5453975A true JPS5453975A (en) | 1979-04-27 |
| JPS6136395B2 JPS6136395B2 (en) | 1986-08-18 |
Family
ID=14776309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12003677A Granted JPS5453975A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5453975A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561528A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS561529A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS599983A (en) * | 1982-07-08 | 1984-01-19 | Sanyo Electric Co Ltd | Manufacture of gallium phosphide green light emitting diode |
| JPS5918687A (en) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | Manufacture of gallium phosphide light emitting diode |
| JPS5980981A (en) * | 1982-11-01 | 1984-05-10 | Sanyo Electric Co Ltd | Gallium phosphorus green color emitting diode and manufacture thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0557490A (en) * | 1991-08-28 | 1993-03-09 | Katsuji Nakasuda | Device for compressing empty can for collecting |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
-
1977
- 1977-10-07 JP JP12003677A patent/JPS5453975A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561528A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS561529A (en) * | 1979-06-18 | 1981-01-09 | Toshiba Corp | Manufacture of epitaxial wafer of 3-5 group compound semiconductor |
| JPS599983A (en) * | 1982-07-08 | 1984-01-19 | Sanyo Electric Co Ltd | Manufacture of gallium phosphide green light emitting diode |
| JPH0550154B2 (en) * | 1982-07-08 | 1993-07-28 | Sanyo Electric Co | |
| JPS5918687A (en) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | Manufacture of gallium phosphide light emitting diode |
| JPH0550155B2 (en) * | 1982-07-21 | 1993-07-28 | Sanyo Electric Co | |
| JPS5980981A (en) * | 1982-11-01 | 1984-05-10 | Sanyo Electric Co Ltd | Gallium phosphorus green color emitting diode and manufacture thereof |
| JPH0547996B2 (en) * | 1982-11-01 | 1993-07-20 | Sanyo Electric Co | |
| JPH05335621A (en) * | 1982-11-01 | 1993-12-17 | Sanyo Electric Co Ltd | Gallium phosphide green light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136395B2 (en) | 1986-08-18 |
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