JPS5562727A - Diffusing method of n-type impurity - Google Patents
Diffusing method of n-type impurityInfo
- Publication number
- JPS5562727A JPS5562727A JP13600678A JP13600678A JPS5562727A JP S5562727 A JPS5562727 A JP S5562727A JP 13600678 A JP13600678 A JP 13600678A JP 13600678 A JP13600678 A JP 13600678A JP S5562727 A JPS5562727 A JP S5562727A
- Authority
- JP
- Japan
- Prior art keywords
- type impurity
- phosphorus
- diffused
- gallium
- sulfide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To avoid the generation of metamorphic layer on the surface of semiconductor by using sulfide for the diffusion source when n-type impurity is diffused into III-V group compound semiconductor, a component of which is phosphorus by the sealed tube method.
CONSTITUTION: Indium phosphide substrate 1, on which diffusion masks 3 are provided, phosphorus 4 and gallium sulfide 7 are put in a quartz tube 6, which is vacuum-sealed, and is placed in the furnace. Temperature is raised up to 800°C or more, and is kept for a fixed time while sulfur dissociated from the gallium is selectively diffused. After this, the quartz tube is taken from the furnace and rapidly cooled. At this time, when the inner volume of the tube is on the order of 12cc, the amount of phosphorus and gallium sulfide is make about 10mg respectively. In this way, a metamorphic layer is not produced on the surface of substrate, n-type impurity can stably be diffused, the quantity of diffusion source can easily be weighed because it is on the order of several milligram.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13600678A JPS5562727A (en) | 1978-11-02 | 1978-11-02 | Diffusing method of n-type impurity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13600678A JPS5562727A (en) | 1978-11-02 | 1978-11-02 | Diffusing method of n-type impurity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5562727A true JPS5562727A (en) | 1980-05-12 |
Family
ID=15164979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13600678A Pending JPS5562727A (en) | 1978-11-02 | 1978-11-02 | Diffusing method of n-type impurity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562727A (en) |
-
1978
- 1978-11-02 JP JP13600678A patent/JPS5562727A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS549592A (en) | Luminous semiconductor element | |
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS5562727A (en) | Diffusing method of n-type impurity | |
JPS5460858A (en) | Manufacture of gallium arsenide crystal wafer | |
JPS5544791A (en) | Diffusing method for impurity to 3-5 compound | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS54162451A (en) | Heat treatment method of compound semiconductor and its heat treatment unit | |
JPS54133889A (en) | Manufacture of gallium-phosphide green luminous element | |
JPS5642335A (en) | Zinc diffusion to 3-5 group compound semiconductor | |
JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS5737823A (en) | Vapor phase growth device | |
JPS53121492A (en) | Manufacture for solar cell | |
JPS5311574A (en) | Production of semiconductor device | |
JPS54103670A (en) | Impurity diffusion method of semiconductor single crystal | |
JPS5472669A (en) | Impurity diffusing method of closing tube type | |
JPS5314585A (en) | Semiconductor device | |
JPS54106169A (en) | Vapor epitaxial growth device | |
JPS54111759A (en) | Liquid epitaxial growing method and its device | |
JPS5591815A (en) | Silicon epitaxial growth | |
JPS51140559A (en) | Impurities diffusing to iii-v group compound semi-conductor base plate | |
JPS51120666A (en) | Semiconductor device manufacturing method | |
JPS5250165A (en) | Semiconductor diffusion method | |
JPS51126049A (en) | Compounded semi-conductor gaseous phase epitaxial growth method | |
JPS5368569A (en) | Rough surfaced substrate for impurity diffusion |