JPS5562727A - Diffusing method of n-type impurity - Google Patents

Diffusing method of n-type impurity

Info

Publication number
JPS5562727A
JPS5562727A JP13600678A JP13600678A JPS5562727A JP S5562727 A JPS5562727 A JP S5562727A JP 13600678 A JP13600678 A JP 13600678A JP 13600678 A JP13600678 A JP 13600678A JP S5562727 A JPS5562727 A JP S5562727A
Authority
JP
Japan
Prior art keywords
type impurity
phosphorus
diffused
gallium
sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13600678A
Other languages
Japanese (ja)
Inventor
Etsuji Omura
Toshio Murotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13600678A priority Critical patent/JPS5562727A/en
Publication of JPS5562727A publication Critical patent/JPS5562727A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To avoid the generation of metamorphic layer on the surface of semiconductor by using sulfide for the diffusion source when n-type impurity is diffused into III-V group compound semiconductor, a component of which is phosphorus by the sealed tube method.
CONSTITUTION: Indium phosphide substrate 1, on which diffusion masks 3 are provided, phosphorus 4 and gallium sulfide 7 are put in a quartz tube 6, which is vacuum-sealed, and is placed in the furnace. Temperature is raised up to 800°C or more, and is kept for a fixed time while sulfur dissociated from the gallium is selectively diffused. After this, the quartz tube is taken from the furnace and rapidly cooled. At this time, when the inner volume of the tube is on the order of 12cc, the amount of phosphorus and gallium sulfide is make about 10mg respectively. In this way, a metamorphic layer is not produced on the surface of substrate, n-type impurity can stably be diffused, the quantity of diffusion source can easily be weighed because it is on the order of several milligram.
COPYRIGHT: (C)1980,JPO&Japio
JP13600678A 1978-11-02 1978-11-02 Diffusing method of n-type impurity Pending JPS5562727A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13600678A JPS5562727A (en) 1978-11-02 1978-11-02 Diffusing method of n-type impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13600678A JPS5562727A (en) 1978-11-02 1978-11-02 Diffusing method of n-type impurity

Publications (1)

Publication Number Publication Date
JPS5562727A true JPS5562727A (en) 1980-05-12

Family

ID=15164979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13600678A Pending JPS5562727A (en) 1978-11-02 1978-11-02 Diffusing method of n-type impurity

Country Status (1)

Country Link
JP (1) JPS5562727A (en)

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