JPS5453977A - Manufacture for gallium phosphide green light emitting element - Google Patents

Manufacture for gallium phosphide green light emitting element

Info

Publication number
JPS5453977A
JPS5453977A JP12003877A JP12003877A JPS5453977A JP S5453977 A JPS5453977 A JP S5453977A JP 12003877 A JP12003877 A JP 12003877A JP 12003877 A JP12003877 A JP 12003877A JP S5453977 A JPS5453977 A JP S5453977A
Authority
JP
Japan
Prior art keywords
concentration
solution
green light
growing
filled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12003877A
Other languages
Japanese (ja)
Other versions
JPS6136396B2 (en
Inventor
Masami Iwamoto
Makoto Tashiro
Tatsuro Beppu
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12003877A priority Critical patent/JPS5453977A/en
Publication of JPS5453977A publication Critical patent/JPS5453977A/en
Publication of JPS6136396B2 publication Critical patent/JPS6136396B2/ja
Granted legal-status Critical Current

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  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To perform green light emission with high efficiency, by filling NH3 to Ga solution on the way of cooling after contacting the Ga solution of GaP unsaturated and filled no donor with the n type GaP around the epitaxial growing start temperature, and by reducing the donor concentration from the substrate side.
CONSTITUTION: At the first half of epitaxial growing, the surface of the quartz reaction tube is reduced with H2, Si is mixed in the Ga solution in high concentration, and Si is filled in the n type GaP growing in high concentration. For the latter half growing, it is made under H2 atomosphere including NH3, a lot of N2 is filled in Ga solution, a part of N2 is compounded with Si stably, decreasing the Si concentration. The S caused by dissolve of the substrate takes major part, the donor concentration is decreased, and the N atoms of the impurity of green light emission center are made high in concentration around the pn junction. Accordingly, the light emission efficiency can greatly be increased
COPYRIGHT: (C)1979,JPO&Japio
JP12003877A 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element Granted JPS5453977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12003877A JPS5453977A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12003877A JPS5453977A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Publications (2)

Publication Number Publication Date
JPS5453977A true JPS5453977A (en) 1979-04-27
JPS6136396B2 JPS6136396B2 (en) 1986-08-18

Family

ID=14776358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12003877A Granted JPS5453977A (en) 1977-10-07 1977-10-07 Manufacture for gallium phosphide green light emitting element

Country Status (1)

Country Link
JP (1) JPS5453977A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930797A (en) * 1982-08-16 1984-02-18 Shin Etsu Handotai Co Ltd Liquid phase epitaxial growth method
JPS60202926A (en) * 1984-03-28 1985-10-14 Shin Etsu Handotai Co Ltd Epitaxial wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116072A (en) * 1976-03-25 1977-09-29 Sumitomo Electric Ind Ltd Process for doping nitrogen to gallium phosphide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116072A (en) * 1976-03-25 1977-09-29 Sumitomo Electric Ind Ltd Process for doping nitrogen to gallium phosphide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5930797A (en) * 1982-08-16 1984-02-18 Shin Etsu Handotai Co Ltd Liquid phase epitaxial growth method
JPH0218319B2 (en) * 1982-08-16 1990-04-25 Shinetsu Handotai Kk
JPS60202926A (en) * 1984-03-28 1985-10-14 Shin Etsu Handotai Co Ltd Epitaxial wafer

Also Published As

Publication number Publication date
JPS6136396B2 (en) 1986-08-18

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