JPS5453977A - Manufacture for gallium phosphide green light emitting element - Google Patents
Manufacture for gallium phosphide green light emitting elementInfo
- Publication number
- JPS5453977A JPS5453977A JP12003877A JP12003877A JPS5453977A JP S5453977 A JPS5453977 A JP S5453977A JP 12003877 A JP12003877 A JP 12003877A JP 12003877 A JP12003877 A JP 12003877A JP S5453977 A JPS5453977 A JP S5453977A
- Authority
- JP
- Japan
- Prior art keywords
- concentration
- solution
- green light
- growing
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To perform green light emission with high efficiency, by filling NH3 to Ga solution on the way of cooling after contacting the Ga solution of GaP unsaturated and filled no donor with the n type GaP around the epitaxial growing start temperature, and by reducing the donor concentration from the substrate side.
CONSTITUTION: At the first half of epitaxial growing, the surface of the quartz reaction tube is reduced with H2, Si is mixed in the Ga solution in high concentration, and Si is filled in the n type GaP growing in high concentration. For the latter half growing, it is made under H2 atomosphere including NH3, a lot of N2 is filled in Ga solution, a part of N2 is compounded with Si stably, decreasing the Si concentration. The S caused by dissolve of the substrate takes major part, the donor concentration is decreased, and the N atoms of the impurity of green light emission center are made high in concentration around the pn junction. Accordingly, the light emission efficiency can greatly be increased
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12003877A JPS5453977A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12003877A JPS5453977A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5453977A true JPS5453977A (en) | 1979-04-27 |
JPS6136396B2 JPS6136396B2 (en) | 1986-08-18 |
Family
ID=14776358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12003877A Granted JPS5453977A (en) | 1977-10-07 | 1977-10-07 | Manufacture for gallium phosphide green light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5453977A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930797A (en) * | 1982-08-16 | 1984-02-18 | Shin Etsu Handotai Co Ltd | Liquid phase epitaxial growth method |
JPS60202926A (en) * | 1984-03-28 | 1985-10-14 | Shin Etsu Handotai Co Ltd | Epitaxial wafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
-
1977
- 1977-10-07 JP JP12003877A patent/JPS5453977A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52116072A (en) * | 1976-03-25 | 1977-09-29 | Sumitomo Electric Ind Ltd | Process for doping nitrogen to gallium phosphide |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930797A (en) * | 1982-08-16 | 1984-02-18 | Shin Etsu Handotai Co Ltd | Liquid phase epitaxial growth method |
JPH0218319B2 (en) * | 1982-08-16 | 1990-04-25 | Shinetsu Handotai Kk | |
JPS60202926A (en) * | 1984-03-28 | 1985-10-14 | Shin Etsu Handotai Co Ltd | Epitaxial wafer |
Also Published As
Publication number | Publication date |
---|---|
JPS6136396B2 (en) | 1986-08-18 |
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