JPS5574193A - Manufacturing semiconductor laser - Google Patents
Manufacturing semiconductor laserInfo
- Publication number
- JPS5574193A JPS5574193A JP14685578A JP14685578A JPS5574193A JP S5574193 A JPS5574193 A JP S5574193A JP 14685578 A JP14685578 A JP 14685578A JP 14685578 A JP14685578 A JP 14685578A JP S5574193 A JPS5574193 A JP S5574193A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gaas
- epitaxially grown
- small
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To obtain high-quality crystal layer wherein lattice defects are small, by forming a layer which encloses the side of an active layer at the first stage of liquid- phase epitaxial growth and growning the active layer and a layer to be formed thereon.
CONSTITUTION: On a semiconductor 11 comprising n-type GaAs, an n-type Al0.3 Ga0.7As layer 12, an n-type Al0.1Ga0.9As layer 13, and an n-type Al0.3Ga0.7As layer 14 are epitaxially grown in liquid phase. Then, the layer 14 is selectively etched until the surface of a layer 13 is reached, and a stripe-shaped etched groove is provided. After a part of the layer 13 has been melted back, a p-type GaAs layer 15 and a p-type Al0.3Ga0.7As layer are epitaxially grown in liquid phase sequentilally. As a result, As lattice points caused by dissociation of As atoms due to thermal decomposition action are not generated in a large quantity on the GaAs active layer, and a high-quality crystal layer wherein lattice defects are small can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14685578A JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14685578A JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5574193A true JPS5574193A (en) | 1980-06-04 |
JPS6118878B2 JPS6118878B2 (en) | 1986-05-14 |
Family
ID=15417070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14685578A Granted JPS5574193A (en) | 1978-11-28 | 1978-11-28 | Manufacturing semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5574193A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5769793A (en) * | 1980-10-16 | 1982-04-28 | Mitsubishi Electric Corp | Semiconductor laser device |
-
1978
- 1978-11-28 JP JP14685578A patent/JPS5574193A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5769793A (en) * | 1980-10-16 | 1982-04-28 | Mitsubishi Electric Corp | Semiconductor laser device |
Also Published As
Publication number | Publication date |
---|---|
JPS6118878B2 (en) | 1986-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54154984A (en) | Semiconductor laser device and its manufacture | |
JPS52152164A (en) | Epitaxial wafer of group iii-v compound | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5574193A (en) | Manufacturing semiconductor laser | |
JPS5493380A (en) | Semiconductor light emitting device | |
JPS5548991A (en) | Semiconductor joining laser forming method | |
JPS54152879A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5534482A (en) | Manufacturing method for semiconductor laser | |
JPS5676588A (en) | Manufacture of semiconductor laser | |
JPS5574195A (en) | Manufacturing semiconductor laser | |
JPH0372680A (en) | Semiconductor material, photoelectric integrated circuit element, and crystal growth method of material | |
JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS52146555A (en) | Liquid phase epitaxial growth method | |
JPS5518087A (en) | Semiconductor laser device and manufacture thereof | |
JPS5629382A (en) | Light emitting device of double hetero structure and manufacture thereof | |
JPS5724591A (en) | Manufacture of semiconductor laser device | |
JPS5587423A (en) | Semiconductor device | |
JPS5574194A (en) | Manufacturing semiconductor laser | |
JPS5460877A (en) | Stripe structure of semiconductor laser element | |
JPS54130889A (en) | Selection method of semiconductor laser device | |
JPS5688390A (en) | Manufacture of semiconductor laser | |
JPS5574192A (en) | Manufacturing semiconductor laser | |
JPS55125691A (en) | Distributed feedback type semiconductor laser | |
JPS57183399A (en) | Preparation of semiconductor crystal | |
JPS55123189A (en) | Manufacture of semiconductor laser |