JPS5574193A - Manufacturing semiconductor laser - Google Patents

Manufacturing semiconductor laser

Info

Publication number
JPS5574193A
JPS5574193A JP14685578A JP14685578A JPS5574193A JP S5574193 A JPS5574193 A JP S5574193A JP 14685578 A JP14685578 A JP 14685578A JP 14685578 A JP14685578 A JP 14685578A JP S5574193 A JPS5574193 A JP S5574193A
Authority
JP
Japan
Prior art keywords
layer
type
gaas
epitaxially grown
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14685578A
Other languages
Japanese (ja)
Other versions
JPS6118878B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14685578A priority Critical patent/JPS5574193A/en
Publication of JPS5574193A publication Critical patent/JPS5574193A/en
Publication of JPS6118878B2 publication Critical patent/JPS6118878B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain high-quality crystal layer wherein lattice defects are small, by forming a layer which encloses the side of an active layer at the first stage of liquid- phase epitaxial growth and growning the active layer and a layer to be formed thereon.
CONSTITUTION: On a semiconductor 11 comprising n-type GaAs, an n-type Al0.3 Ga0.7As layer 12, an n-type Al0.1Ga0.9As layer 13, and an n-type Al0.3Ga0.7As layer 14 are epitaxially grown in liquid phase. Then, the layer 14 is selectively etched until the surface of a layer 13 is reached, and a stripe-shaped etched groove is provided. After a part of the layer 13 has been melted back, a p-type GaAs layer 15 and a p-type Al0.3Ga0.7As layer are epitaxially grown in liquid phase sequentilally. As a result, As lattice points caused by dissociation of As atoms due to thermal decomposition action are not generated in a large quantity on the GaAs active layer, and a high-quality crystal layer wherein lattice defects are small can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP14685578A 1978-11-28 1978-11-28 Manufacturing semiconductor laser Granted JPS5574193A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14685578A JPS5574193A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14685578A JPS5574193A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5574193A true JPS5574193A (en) 1980-06-04
JPS6118878B2 JPS6118878B2 (en) 1986-05-14

Family

ID=15417070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14685578A Granted JPS5574193A (en) 1978-11-28 1978-11-28 Manufacturing semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5574193A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device

Also Published As

Publication number Publication date
JPS6118878B2 (en) 1986-05-14

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