JPS5534482A - Manufacturing method for semiconductor laser - Google Patents

Manufacturing method for semiconductor laser

Info

Publication number
JPS5534482A
JPS5534482A JP10779578A JP10779578A JPS5534482A JP S5534482 A JPS5534482 A JP S5534482A JP 10779578 A JP10779578 A JP 10779578A JP 10779578 A JP10779578 A JP 10779578A JP S5534482 A JPS5534482 A JP S5534482A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
grown
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10779578A
Other languages
Japanese (ja)
Other versions
JPS613116B2 (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10779578A priority Critical patent/JPS5534482A/en
Publication of JPS5534482A publication Critical patent/JPS5534482A/en
Publication of JPS613116B2 publication Critical patent/JPS613116B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To obtain rib guide stripe type semiconductor laser of excellent reliability, by growing active layer and the layer above thereof in the second stage, securing layer whereinto sides of active layer are buried utilizing aqueous phase epitaxial growth method in the first stage.
CONSTITUTION: Utilizing the first aqueous phase epitaxial method, n-type Al0.3 Ga0.7As layer 9, p-type GaAs layer (active layer) 10, p-type Al0.3Ga0.7As layer 11 are grown in this order in succession on the n-type GaAs semiconductor substrate 8. After forming SiO2 layer 19 on the above mentioned p-type layer 11, stripe form etching groove is established by etching p-type layer 11 selectively with depth reaching the surface of p-type GaAs layer 10. Employing solution which helps in growing active layer, p-type layer 10 is melted back until reaching n-type layer 9 in hydrogen gas atmosphere. Then, at the same time when melting back process is finished, p-type GaAs layer 12, p-type Al0.3Ga0.7As layer 13 is grown in succession again, and crystal surface, together with the active layer which is thicker than the active layer initially grown are made into evenness.
COPYRIGHT: (C)1980,JPO&Japio
JP10779578A 1978-09-01 1978-09-01 Manufacturing method for semiconductor laser Granted JPS5534482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779578A JPS5534482A (en) 1978-09-01 1978-09-01 Manufacturing method for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779578A JPS5534482A (en) 1978-09-01 1978-09-01 Manufacturing method for semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5534482A true JPS5534482A (en) 1980-03-11
JPS613116B2 JPS613116B2 (en) 1986-01-30

Family

ID=14468216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10779578A Granted JPS5534482A (en) 1978-09-01 1978-09-01 Manufacturing method for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5534482A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501634A (en) * 1983-06-17 1985-09-26 ア−ルシ−エ−　コ−ポレ−ション Method for manufacturing laser array with flat active layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0627263U (en) * 1992-09-18 1994-04-12 西川ゴム工業株式会社 Door weather strip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501634A (en) * 1983-06-17 1985-09-26 ア−ルシ−エ−　コ−ポレ−ション Method for manufacturing laser array with flat active layer
JPH0573075B2 (en) * 1983-06-17 1993-10-13 Rca Corp

Also Published As

Publication number Publication date
JPS613116B2 (en) 1986-01-30

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