JPS54146585A - Semiconductor luminous element and its manufacture - Google Patents

Semiconductor luminous element and its manufacture

Info

Publication number
JPS54146585A
JPS54146585A JP5532778A JP5532778A JPS54146585A JP S54146585 A JPS54146585 A JP S54146585A JP 5532778 A JP5532778 A JP 5532778A JP 5532778 A JP5532778 A JP 5532778A JP S54146585 A JPS54146585 A JP S54146585A
Authority
JP
Japan
Prior art keywords
stripe
type
layer
oxide film
melt back
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5532778A
Other languages
Japanese (ja)
Other versions
JPS6028157B2 (en
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP53055327A priority Critical patent/JPS6028157B2/en
Publication of JPS54146585A publication Critical patent/JPS54146585A/en
Publication of JPS6028157B2 publication Critical patent/JPS6028157B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To form the active layer with limitation between two regrown layers by giving the partial dissolution and solidification to the crystal growth layer.
CONSTITUTION: The n-type Ga0.7.Al0.2As2 and active layer p-type GaAs3 are formed with addition of Si, and then n-type Ga0.7Al0.3 As4 and n-type GaAs5 are formed with addition of Te onto n+ GaAs substrate 1 in lamination, and then CVD oxide film 8 is coated with parallel windows are drilled 9 with space W between. A contact is given with GaAlAS solution in the furnace, and thus layer 5 remains with a high reproducibility and with depth d of the melt back plus stripe width r = W -2d. The temperature is lowered down after end of the melt back, and thus the recrystalization is given within layer 5 with the melt back applied. The crystal is dissolved with HF after growth of Ga1-XAlAs (X>0.5). Film 8 is removed, and then oxide film 10 is coated again with the window drilled at stripe-type remaining part 11. And electrode 13 is formed on film 10 and stripe 11. With this method, the buried stripe structure is ibtained in a high reproducibility with no oxide film formed to the stripe and with no fault caused at the recrystalization time. At the same time, the fundamental lateral mode oscillation can be obtained within the microspot by reducing the stripe width.
COPYRIGHT: (C)1979,JPO&Japio
JP53055327A 1978-05-09 1978-05-09 Manufacturing method of semiconductor light emitting device Expired JPS6028157B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53055327A JPS6028157B2 (en) 1978-05-09 1978-05-09 Manufacturing method of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53055327A JPS6028157B2 (en) 1978-05-09 1978-05-09 Manufacturing method of semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS54146585A true JPS54146585A (en) 1979-11-15
JPS6028157B2 JPS6028157B2 (en) 1985-07-03

Family

ID=12995433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53055327A Expired JPS6028157B2 (en) 1978-05-09 1978-05-09 Manufacturing method of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS6028157B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911692A (en) * 1982-07-13 1984-01-21 Nec Corp Semiconductor laser

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6410120U (en) * 1987-07-08 1989-01-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911692A (en) * 1982-07-13 1984-01-21 Nec Corp Semiconductor laser
JP2680804B2 (en) * 1982-07-13 1997-11-19 日本電気株式会社 Semiconductor laser

Also Published As

Publication number Publication date
JPS6028157B2 (en) 1985-07-03

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