JPS54146585A - Semiconductor luminous element and its manufacture - Google Patents
Semiconductor luminous element and its manufactureInfo
- Publication number
- JPS54146585A JPS54146585A JP5532778A JP5532778A JPS54146585A JP S54146585 A JPS54146585 A JP S54146585A JP 5532778 A JP5532778 A JP 5532778A JP 5532778 A JP5532778 A JP 5532778A JP S54146585 A JPS54146585 A JP S54146585A
- Authority
- JP
- Japan
- Prior art keywords
- stripe
- type
- layer
- oxide film
- melt back
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form the active layer with limitation between two regrown layers by giving the partial dissolution and solidification to the crystal growth layer.
CONSTITUTION: The n-type Ga0.7.Al0.2As2 and active layer p-type GaAs3 are formed with addition of Si, and then n-type Ga0.7Al0.3 As4 and n-type GaAs5 are formed with addition of Te onto n+ GaAs substrate 1 in lamination, and then CVD oxide film 8 is coated with parallel windows are drilled 9 with space W between. A contact is given with GaAlAS solution in the furnace, and thus layer 5 remains with a high reproducibility and with depth d of the melt back plus stripe width r = W -2d. The temperature is lowered down after end of the melt back, and thus the recrystalization is given within layer 5 with the melt back applied. The crystal is dissolved with HF after growth of Ga1-XAlAs (X>0.5). Film 8 is removed, and then oxide film 10 is coated again with the window drilled at stripe-type remaining part 11. And electrode 13 is formed on film 10 and stripe 11. With this method, the buried stripe structure is ibtained in a high reproducibility with no oxide film formed to the stripe and with no fault caused at the recrystalization time. At the same time, the fundamental lateral mode oscillation can be obtained within the microspot by reducing the stripe width.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53055327A JPS6028157B2 (en) | 1978-05-09 | 1978-05-09 | Manufacturing method of semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53055327A JPS6028157B2 (en) | 1978-05-09 | 1978-05-09 | Manufacturing method of semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54146585A true JPS54146585A (en) | 1979-11-15 |
JPS6028157B2 JPS6028157B2 (en) | 1985-07-03 |
Family
ID=12995433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53055327A Expired JPS6028157B2 (en) | 1978-05-09 | 1978-05-09 | Manufacturing method of semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6028157B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911692A (en) * | 1982-07-13 | 1984-01-21 | Nec Corp | Semiconductor laser |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6410120U (en) * | 1987-07-08 | 1989-01-19 |
-
1978
- 1978-05-09 JP JP53055327A patent/JPS6028157B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911692A (en) * | 1982-07-13 | 1984-01-21 | Nec Corp | Semiconductor laser |
JP2680804B2 (en) * | 1982-07-13 | 1997-11-19 | 日本電気株式会社 | Semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6028157B2 (en) | 1985-07-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56104488A (en) | Semiconductor laser element | |
US3961996A (en) | Process of producing semiconductor laser device | |
JPS54146585A (en) | Semiconductor luminous element and its manufacture | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS55121693A (en) | Manufacture of band-like semiconductor laser by selective melt-back process | |
JPS5493380A (en) | Semiconductor light emitting device | |
JPS54152879A (en) | Structure of semiconductor laser element and its manufacture | |
JPS59119781A (en) | Manufacture of semiconductor laser | |
SABUROU et al. | Semiconductor luminous element and its manufacture | |
JPS5724591A (en) | Manufacture of semiconductor laser device | |
JPS57162382A (en) | Semiconductor laser | |
JPS5534482A (en) | Manufacturing method for semiconductor laser | |
JPS5676588A (en) | Manufacture of semiconductor laser | |
JPS5451491A (en) | Semiconductor laser | |
JPS6482615A (en) | Manufacture of semiconductor element | |
JPS5596694A (en) | Semiconductor laser device and method of fabricating the same | |
JPS54115087A (en) | Double hetero junction laser of stripe type | |
JPS5624995A (en) | Manufacture of semiconductor laser | |
JPS57157590A (en) | Manufacture of semiconductor laser device | |
JPS54106174A (en) | Semiconductor device and its manufacture | |
JPS5527625A (en) | Oxide film etching method | |
JPS5474689A (en) | Semiconductor laser device and its manufacture | |
JPS5478682A (en) | Manufactre of semiconductor laser | |
JPS5379473A (en) | Manufacture of semiconductor device | |
JPS5735392A (en) | Semiconductor light source with photodetector to monitor |