JPS5527625A - Oxide film etching method - Google Patents

Oxide film etching method

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Publication number
JPS5527625A
JPS5527625A JP10059078A JP10059078A JPS5527625A JP S5527625 A JPS5527625 A JP S5527625A JP 10059078 A JP10059078 A JP 10059078A JP 10059078 A JP10059078 A JP 10059078A JP S5527625 A JPS5527625 A JP S5527625A
Authority
JP
Japan
Prior art keywords
film
etching
oxide film
stripes
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10059078A
Other languages
Japanese (ja)
Inventor
Takuo Takenaka
Hiroshi Hayashi
Kazuhisa Murata
Morichika Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP10059078A priority Critical patent/JPS5527625A/en
Publication of JPS5527625A publication Critical patent/JPS5527625A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To make it possible to operate Al2O3 film etching so as to form Ga2O3, by etching oxide film formed on a semiconductor crystal consisting of Ga by using an etching solution consisting of melted KOH.
CONSTITUTION: By the CVD method, Al2O3 film, about 2000Å thick, is formed on GaAs base. With a photoresist used as mark Al2O3 film is etched into stripes, each 5μm wide, by phosphoric acid at 60°C. Next, by the liquid-phase growing method, Ga0.7Al9.3 layer is selectively grown on the stripes. Here, to remove the residual Al2O3 film completely, this is dipped in melted KOH at about 350°C for about 20 seconds. By this, the Al2 O3film is completely etched and removed. The exposed surface after the etching is maintained clean so as to prevent any obstacle in the next process of liquid-phase growing.
COPYRIGHT: (C)1980,JPO&Japio
JP10059078A 1978-08-17 1978-08-17 Oxide film etching method Pending JPS5527625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10059078A JPS5527625A (en) 1978-08-17 1978-08-17 Oxide film etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10059078A JPS5527625A (en) 1978-08-17 1978-08-17 Oxide film etching method

Publications (1)

Publication Number Publication Date
JPS5527625A true JPS5527625A (en) 1980-02-27

Family

ID=14278082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10059078A Pending JPS5527625A (en) 1978-08-17 1978-08-17 Oxide film etching method

Country Status (1)

Country Link
JP (1) JPS5527625A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236334A (en) * 1987-03-25 1988-10-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02133939A (en) * 1988-11-14 1990-05-23 Yamaha Corp Formation of multilayer interconnection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236334A (en) * 1987-03-25 1988-10-03 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02133939A (en) * 1988-11-14 1990-05-23 Yamaha Corp Formation of multilayer interconnection

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