JPS55128822A - Method of epitaxial growth at liquid phase - Google Patents

Method of epitaxial growth at liquid phase

Info

Publication number
JPS55128822A
JPS55128822A JP3642679A JP3642679A JPS55128822A JP S55128822 A JPS55128822 A JP S55128822A JP 3642679 A JP3642679 A JP 3642679A JP 3642679 A JP3642679 A JP 3642679A JP S55128822 A JPS55128822 A JP S55128822A
Authority
JP
Japan
Prior art keywords
layer
type
type inp
liquid phase
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3642679A
Other languages
Japanese (ja)
Other versions
JPS625330B2 (en
Inventor
Kazuo Sakai
Shigeyuki Akiba
Yuichi Matsushima
Akiya Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP3642679A priority Critical patent/JPS55128822A/en
Publication of JPS55128822A publication Critical patent/JPS55128822A/en
Publication of JPS625330B2 publication Critical patent/JPS625330B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To epitaxially and bidimensionally grow layers of different compositions on an identical plane at liquid phase, by utilizing the difference between the speeds of dissolution of semiconductors of different compositions into a metal solution to produce a mask of a thin semiconductor film and using the mask to perform etching and crystal growth.
CONSTITUTION: An n-type InP layer 2, an In1-sGasAst-1P1-t layer 3 (0.42t≤s≤ 0.50t, 0.58≤t≤0.65), a p-type InP layer 4, an n-type In1-vGavAswP1-w layer 5 (0.42w≤v≤0.50w, 0.7≤w≤1) and an n-type In1-xGaxAsyP1-y layer 9 (0.42≤ x≤0.50y, O≤y≤0.65) are sequentially grown on an n-type InP substrate 1. The central part of the layer 9 is removed by photolithography and chemical etching to provide a recess. The exposed part of the layer 5 is removed by using a solution in which the liquid-phase P concentration in an In solvent is about 0.55% by atom. After that, an In1-pGapAsaP1-a layer 6 (0.42a≤p≤0.50Q) is grown on the entire surface. At that time, the forbidden band widths Eg5, Eg3, Eg6 of the layers 5, 3, 6 are prescribed as Eg5<Eg3<Eg6.
COPYRIGHT: (C)1980,JPO&Japio
JP3642679A 1979-03-28 1979-03-28 Method of epitaxial growth at liquid phase Granted JPS55128822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3642679A JPS55128822A (en) 1979-03-28 1979-03-28 Method of epitaxial growth at liquid phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3642679A JPS55128822A (en) 1979-03-28 1979-03-28 Method of epitaxial growth at liquid phase

Publications (2)

Publication Number Publication Date
JPS55128822A true JPS55128822A (en) 1980-10-06
JPS625330B2 JPS625330B2 (en) 1987-02-04

Family

ID=12469487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3642679A Granted JPS55128822A (en) 1979-03-28 1979-03-28 Method of epitaxial growth at liquid phase

Country Status (1)

Country Link
JP (1) JPS55128822A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57140399A (en) * 1981-02-23 1982-08-30 Toshiba Corp Liquid phase epitaxial growing method
JPS5810885A (en) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Injection laser
JPS58180078A (en) * 1982-04-15 1983-10-21 Fujitsu Ltd Optical semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL.PHYS *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57140399A (en) * 1981-02-23 1982-08-30 Toshiba Corp Liquid phase epitaxial growing method
JPS5810885A (en) * 1981-07-02 1983-01-21 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Injection laser
JPS58180078A (en) * 1982-04-15 1983-10-21 Fujitsu Ltd Optical semiconductor device

Also Published As

Publication number Publication date
JPS625330B2 (en) 1987-02-04

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