JPS55128822A - Method of epitaxial growth at liquid phase - Google Patents
Method of epitaxial growth at liquid phaseInfo
- Publication number
- JPS55128822A JPS55128822A JP3642679A JP3642679A JPS55128822A JP S55128822 A JPS55128822 A JP S55128822A JP 3642679 A JP3642679 A JP 3642679A JP 3642679 A JP3642679 A JP 3642679A JP S55128822 A JPS55128822 A JP S55128822A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type inp
- liquid phase
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To epitaxially and bidimensionally grow layers of different compositions on an identical plane at liquid phase, by utilizing the difference between the speeds of dissolution of semiconductors of different compositions into a metal solution to produce a mask of a thin semiconductor film and using the mask to perform etching and crystal growth.
CONSTITUTION: An n-type InP layer 2, an In1-sGasAst-1P1-t layer 3 (0.42t≤s≤ 0.50t, 0.58≤t≤0.65), a p-type InP layer 4, an n-type In1-vGavAswP1-w layer 5 (0.42w≤v≤0.50w, 0.7≤w≤1) and an n-type In1-xGaxAsyP1-y layer 9 (0.42≤ x≤0.50y, O≤y≤0.65) are sequentially grown on an n-type InP substrate 1. The central part of the layer 9 is removed by photolithography and chemical etching to provide a recess. The exposed part of the layer 5 is removed by using a solution in which the liquid-phase P concentration in an In solvent is about 0.55% by atom. After that, an In1-pGapAsaP1-a layer 6 (0.42a≤p≤0.50Q) is grown on the entire surface. At that time, the forbidden band widths Eg5, Eg3, Eg6 of the layers 5, 3, 6 are prescribed as Eg5<Eg3<Eg6.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3642679A JPS55128822A (en) | 1979-03-28 | 1979-03-28 | Method of epitaxial growth at liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3642679A JPS55128822A (en) | 1979-03-28 | 1979-03-28 | Method of epitaxial growth at liquid phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55128822A true JPS55128822A (en) | 1980-10-06 |
JPS625330B2 JPS625330B2 (en) | 1987-02-04 |
Family
ID=12469487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3642679A Granted JPS55128822A (en) | 1979-03-28 | 1979-03-28 | Method of epitaxial growth at liquid phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128822A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57140399A (en) * | 1981-02-23 | 1982-08-30 | Toshiba Corp | Liquid phase epitaxial growing method |
JPS5810885A (en) * | 1981-07-02 | 1983-01-21 | インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン | Injection laser |
JPS58180078A (en) * | 1982-04-15 | 1983-10-21 | Fujitsu Ltd | Optical semiconductor device |
-
1979
- 1979-03-28 JP JP3642679A patent/JPS55128822A/en active Granted
Non-Patent Citations (1)
Title |
---|
JAPAN.J.APPL.PHYS * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57140399A (en) * | 1981-02-23 | 1982-08-30 | Toshiba Corp | Liquid phase epitaxial growing method |
JPS5810885A (en) * | 1981-07-02 | 1983-01-21 | インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン | Injection laser |
JPS58180078A (en) * | 1982-04-15 | 1983-10-21 | Fujitsu Ltd | Optical semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS625330B2 (en) | 1987-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5688388A (en) | Semiconductor laser device | |
JPS55128822A (en) | Method of epitaxial growth at liquid phase | |
JPS52152164A (en) | Epitaxial wafer of group iii-v compound | |
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS57187936A (en) | Manufacture of 3-5 family compound semiconductor element | |
JPS54152879A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5315299A (en) | Liquid-phase epitaxial growth method of electrooptical crystals | |
JPS5343481A (en) | Mirror surface etching method of sapphire substrate crystal | |
JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
JPS5534482A (en) | Manufacturing method for semiconductor laser | |
JPS5323561A (en) | Vapor phase growth met hod of compound semiconductor | |
JPS57199284A (en) | Manufacture of (alga)as hetero embedded semiconductor laser | |
JPS5587423A (en) | Semiconductor device | |
JPS55113393A (en) | Fabricating method of semiconductor laser element | |
JPS5432182A (en) | Epitaxial growing method in liquid phase | |
JPS52116070A (en) | Process for lqiuid phase epitaxial growth | |
JPS5771899A (en) | Epitaxial growth of liquid phase of semiconductor of 1-5 group compound | |
JPS5470765A (en) | Manufacture of gallium arsenide wafer | |
JPS57106117A (en) | Method for liquid phase epitaxial growth | |
JPS52141187A (en) | Semiconductor laser and its liquid phase epitaxial crystal growth method | |
JPS5257097A (en) | Method for fabrication of gallium arsenide having steep distribution o f impurity concentration | |
JPS5574193A (en) | Manufacturing semiconductor laser | |
JPS52149475A (en) | Liquid grown wafer and its production | |
JPS5451778A (en) | Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate | |
JPS5271172A (en) | Growth of p type boron phosphide semiconductor |