JPS5451778A - Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate - Google Patents
Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrateInfo
- Publication number
- JPS5451778A JPS5451778A JP11876777A JP11876777A JPS5451778A JP S5451778 A JPS5451778 A JP S5451778A JP 11876777 A JP11876777 A JP 11876777A JP 11876777 A JP11876777 A JP 11876777A JP S5451778 A JPS5451778 A JP S5451778A
- Authority
- JP
- Japan
- Prior art keywords
- inp substrate
- liquid
- compound semiconductor
- group compound
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a uniform layer with no fault on the InP substrate by forming the desired III-V group compound semiconductor layer through the epitaxial growth via the liquid-phase epitaxial layer of In1-xGaxAsyP1-Y(0<x<0.6, 0<y<0.8).
CONSTITUTION: When In1-xGaxAsyP1-y of a fixed composition ratio is formed on the InP substrate, the fused solution of four elements of In, Ga, As and P touches the surface of the InP substrate to lose instantaneously the minute drop of In forming the coarse surface with no method applied to eliminate the surface coarseness by the melt-back. As a result, the epitaxial layer of In1-xGaxAsyP1-y featuring the low-exponent surfaces such as (100), (111), etc. can be laminated with no fault. And accordingly, the liquid-phase epitaxial layer of the desired III-V group compound semiconductor becomes uniform with no fault
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11876777A JPS5451778A (en) | 1977-10-03 | 1977-10-03 | Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11876777A JPS5451778A (en) | 1977-10-03 | 1977-10-03 | Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5451778A true JPS5451778A (en) | 1979-04-23 |
Family
ID=14744553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11876777A Pending JPS5451778A (en) | 1977-10-03 | 1977-10-03 | Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5451778A (en) |
-
1977
- 1977-10-03 JP JP11876777A patent/JPS5451778A/en active Pending
Non-Patent Citations (2)
Title |
---|
APPLIED PHYSICS LETTERS#V28#N5=1976 * |
JAPAN JOUNAL OF APPLIED PHYSICS#V15#M10=1976 * |
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