JPS5451778A - Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate - Google Patents

Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate

Info

Publication number
JPS5451778A
JPS5451778A JP11876777A JP11876777A JPS5451778A JP S5451778 A JPS5451778 A JP S5451778A JP 11876777 A JP11876777 A JP 11876777A JP 11876777 A JP11876777 A JP 11876777A JP S5451778 A JPS5451778 A JP S5451778A
Authority
JP
Japan
Prior art keywords
inp substrate
liquid
compound semiconductor
group compound
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11876777A
Other languages
Japanese (ja)
Inventor
Takeshi Kobayashi
Yoshifumi Takanashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11876777A priority Critical patent/JPS5451778A/en
Publication of JPS5451778A publication Critical patent/JPS5451778A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a uniform layer with no fault on the InP substrate by forming the desired III-V group compound semiconductor layer through the epitaxial growth via the liquid-phase epitaxial layer of In1-xGaxAsyP1-Y(0<x<0.6, 0<y<0.8).
CONSTITUTION: When In1-xGaxAsyP1-y of a fixed composition ratio is formed on the InP substrate, the fused solution of four elements of In, Ga, As and P touches the surface of the InP substrate to lose instantaneously the minute drop of In forming the coarse surface with no method applied to eliminate the surface coarseness by the melt-back. As a result, the epitaxial layer of In1-xGaxAsyP1-y featuring the low-exponent surfaces such as (100), (111), etc. can be laminated with no fault. And accordingly, the liquid-phase epitaxial layer of the desired III-V group compound semiconductor becomes uniform with no fault
COPYRIGHT: (C)1979,JPO&Japio
JP11876777A 1977-10-03 1977-10-03 Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate Pending JPS5451778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11876777A JPS5451778A (en) 1977-10-03 1977-10-03 Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11876777A JPS5451778A (en) 1977-10-03 1977-10-03 Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate

Publications (1)

Publication Number Publication Date
JPS5451778A true JPS5451778A (en) 1979-04-23

Family

ID=14744553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11876777A Pending JPS5451778A (en) 1977-10-03 1977-10-03 Forming method for liquid-phase epitaxial growth layer composed of 3-5 group compound semiconductor onto inp substrate

Country Status (1)

Country Link
JP (1) JPS5451778A (en)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#V28#N5=1976 *
JAPAN JOUNAL OF APPLIED PHYSICS#V15#M10=1976 *

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