JPS5771899A - Epitaxial growth of liquid phase of semiconductor of 1-5 group compound - Google Patents

Epitaxial growth of liquid phase of semiconductor of 1-5 group compound

Info

Publication number
JPS5771899A
JPS5771899A JP14623180A JP14623180A JPS5771899A JP S5771899 A JPS5771899 A JP S5771899A JP 14623180 A JP14623180 A JP 14623180A JP 14623180 A JP14623180 A JP 14623180A JP S5771899 A JPS5771899 A JP S5771899A
Authority
JP
Japan
Prior art keywords
semiconductor
growth
liquid phase
epitaxial growth
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14623180A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14623180A priority Critical patent/JPS5771899A/en
Publication of JPS5771899A publication Critical patent/JPS5771899A/en
Pending legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make lattice matching of a semiconductor of III-V compound and to form an epitaxial layer efficiently, by subjecting an AlGaInAs layer to epitaxial growth of liquid crystal through an InGaAsP layer on an InP base plate.
CONSTITUTION: After In(1-u)Ga(u)As(1-v)P(v)(0.3≤u≤0.47, 0≤v≤0.3; preferably u=0.47, and v=0) is subjected to eptitaxial growth of liquid crystal on an InP base plate, Al(x)Ga(y)In(1-x-y)As (0<s≤0.47, 0<y≤0.47) is subjected to eptiaxial growth of liquid phase at a temperature higher than the starting temperature of the above-mentioned eptiaxial growth on the prepared layer.
COPYRIGHT: (C)1982,JPO&Japio
JP14623180A 1980-10-21 1980-10-21 Epitaxial growth of liquid phase of semiconductor of 1-5 group compound Pending JPS5771899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14623180A JPS5771899A (en) 1980-10-21 1980-10-21 Epitaxial growth of liquid phase of semiconductor of 1-5 group compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14623180A JPS5771899A (en) 1980-10-21 1980-10-21 Epitaxial growth of liquid phase of semiconductor of 1-5 group compound

Publications (1)

Publication Number Publication Date
JPS5771899A true JPS5771899A (en) 1982-05-04

Family

ID=15403066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14623180A Pending JPS5771899A (en) 1980-10-21 1980-10-21 Epitaxial growth of liquid phase of semiconductor of 1-5 group compound

Country Status (1)

Country Link
JP (1) JPS5771899A (en)

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