JPS5771899A - Epitaxial growth of liquid phase of semiconductor of 1-5 group compound - Google Patents
Epitaxial growth of liquid phase of semiconductor of 1-5 group compoundInfo
- Publication number
- JPS5771899A JPS5771899A JP14623180A JP14623180A JPS5771899A JP S5771899 A JPS5771899 A JP S5771899A JP 14623180 A JP14623180 A JP 14623180A JP 14623180 A JP14623180 A JP 14623180A JP S5771899 A JPS5771899 A JP S5771899A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- growth
- liquid phase
- epitaxial growth
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To make lattice matching of a semiconductor of III-V compound and to form an epitaxial layer efficiently, by subjecting an AlGaInAs layer to epitaxial growth of liquid crystal through an InGaAsP layer on an InP base plate.
CONSTITUTION: After In(1-u)Ga(u)As(1-v)P(v)(0.3≤u≤0.47, 0≤v≤0.3; preferably u=0.47, and v=0) is subjected to eptitaxial growth of liquid crystal on an InP base plate, Al(x)Ga(y)In(1-x-y)As (0<s≤0.47, 0<y≤0.47) is subjected to eptiaxial growth of liquid phase at a temperature higher than the starting temperature of the above-mentioned eptiaxial growth on the prepared layer.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623180A JPS5771899A (en) | 1980-10-21 | 1980-10-21 | Epitaxial growth of liquid phase of semiconductor of 1-5 group compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14623180A JPS5771899A (en) | 1980-10-21 | 1980-10-21 | Epitaxial growth of liquid phase of semiconductor of 1-5 group compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5771899A true JPS5771899A (en) | 1982-05-04 |
Family
ID=15403066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14623180A Pending JPS5771899A (en) | 1980-10-21 | 1980-10-21 | Epitaxial growth of liquid phase of semiconductor of 1-5 group compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5771899A (en) |
-
1980
- 1980-10-21 JP JP14623180A patent/JPS5771899A/en active Pending
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