JPS5261954A - Low dislocationdensity group iii-v compound semiconductor single cryst al - Google Patents

Low dislocationdensity group iii-v compound semiconductor single cryst al

Info

Publication number
JPS5261954A
JPS5261954A JP13839675A JP13839675A JPS5261954A JP S5261954 A JPS5261954 A JP S5261954A JP 13839675 A JP13839675 A JP 13839675A JP 13839675 A JP13839675 A JP 13839675A JP S5261954 A JPS5261954 A JP S5261954A
Authority
JP
Japan
Prior art keywords
dislocationdensity
low
compound semiconductor
group iii
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13839675A
Other languages
Japanese (ja)
Other versions
JPS5628375B2 (en
Inventor
Keiichiro Fujita
Nobuhiro Kito
Masami Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP13839675A priority Critical patent/JPS5261954A/en
Publication of JPS5261954A publication Critical patent/JPS5261954A/en
Publication of JPS5628375B2 publication Critical patent/JPS5628375B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: Fine regions which vary in lattice constant and chemical bonding force from main single crystal unit are dispersed into the single crystal, whereby high temperature strength is increased so as not to allow the grown crystal to cause plastic deformation even under thermal stress at a practical temperature gradient in the growth direction.
COPYRIGHT: (C)1977,JPO&Japio
JP13839675A 1975-11-17 1975-11-17 Low dislocationdensity group iii-v compound semiconductor single cryst al Granted JPS5261954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13839675A JPS5261954A (en) 1975-11-17 1975-11-17 Low dislocationdensity group iii-v compound semiconductor single cryst al

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13839675A JPS5261954A (en) 1975-11-17 1975-11-17 Low dislocationdensity group iii-v compound semiconductor single cryst al

Publications (2)

Publication Number Publication Date
JPS5261954A true JPS5261954A (en) 1977-05-21
JPS5628375B2 JPS5628375B2 (en) 1981-07-01

Family

ID=15220956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13839675A Granted JPS5261954A (en) 1975-11-17 1975-11-17 Low dislocationdensity group iii-v compound semiconductor single cryst al

Country Status (1)

Country Link
JP (1) JPS5261954A (en)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JOURNAL APPLIED PHYSICS#V38#M2=1967 *
JOURNAL OF THE ELECTROCHEMICAL SOXIETY#V112#M6=1965 *

Also Published As

Publication number Publication date
JPS5628375B2 (en) 1981-07-01

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