JPS5261954A - Low dislocationdensity group iii-v compound semiconductor single cryst al - Google Patents
Low dislocationdensity group iii-v compound semiconductor single cryst alInfo
- Publication number
- JPS5261954A JPS5261954A JP13839675A JP13839675A JPS5261954A JP S5261954 A JPS5261954 A JP S5261954A JP 13839675 A JP13839675 A JP 13839675A JP 13839675 A JP13839675 A JP 13839675A JP S5261954 A JPS5261954 A JP S5261954A
- Authority
- JP
- Japan
- Prior art keywords
- dislocationdensity
- low
- compound semiconductor
- group iii
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: Fine regions which vary in lattice constant and chemical bonding force from main single crystal unit are dispersed into the single crystal, whereby high temperature strength is increased so as not to allow the grown crystal to cause plastic deformation even under thermal stress at a practical temperature gradient in the growth direction.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13839675A JPS5261954A (en) | 1975-11-17 | 1975-11-17 | Low dislocationdensity group iii-v compound semiconductor single cryst al |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13839675A JPS5261954A (en) | 1975-11-17 | 1975-11-17 | Low dislocationdensity group iii-v compound semiconductor single cryst al |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5261954A true JPS5261954A (en) | 1977-05-21 |
JPS5628375B2 JPS5628375B2 (en) | 1981-07-01 |
Family
ID=15220956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13839675A Granted JPS5261954A (en) | 1975-11-17 | 1975-11-17 | Low dislocationdensity group iii-v compound semiconductor single cryst al |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5261954A (en) |
-
1975
- 1975-11-17 JP JP13839675A patent/JPS5261954A/en active Granted
Non-Patent Citations (2)
Title |
---|
JOURNAL APPLIED PHYSICS#V38#M2=1967 * |
JOURNAL OF THE ELECTROCHEMICAL SOXIETY#V112#M6=1965 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5628375B2 (en) | 1981-07-01 |
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