JPS526093A - Production method of semiconductor device - Google Patents
Production method of semiconductor deviceInfo
- Publication number
- JPS526093A JPS526093A JP8186975A JP8186975A JPS526093A JP S526093 A JPS526093 A JP S526093A JP 8186975 A JP8186975 A JP 8186975A JP 8186975 A JP8186975 A JP 8186975A JP S526093 A JPS526093 A JP S526093A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production method
- ordenary
- grow
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: In order to make Ga1-yAlyAs(1≥y≥0) and so on grow through ordenary liquid-crystal growing method on a wafer being constituted with Ga1-xAlx As and so on which contains more than 10% of Al.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8186975A JPS526093A (en) | 1975-07-04 | 1975-07-04 | Production method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8186975A JPS526093A (en) | 1975-07-04 | 1975-07-04 | Production method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS526093A true JPS526093A (en) | 1977-01-18 |
Family
ID=13758464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8186975A Pending JPS526093A (en) | 1975-07-04 | 1975-07-04 | Production method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS526093A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52144991A (en) * | 1976-05-28 | 1977-12-02 | Agency Of Ind Science & Technol | Production of distribution feedback type semiconductor laser |
JPS59129473A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
JPS59129486A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
JPH04155987A (en) * | 1990-10-19 | 1992-05-28 | Hikari Keisoku Gijutsu Kaihatsu Kk | Semiconductor distribution feedback laser device and its manufacture |
-
1975
- 1975-07-04 JP JP8186975A patent/JPS526093A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52144991A (en) * | 1976-05-28 | 1977-12-02 | Agency Of Ind Science & Technol | Production of distribution feedback type semiconductor laser |
JPS5412397B2 (en) * | 1976-05-28 | 1979-05-22 | ||
JPS59129473A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
JPS59129486A (en) * | 1983-01-14 | 1984-07-25 | Toshiba Corp | Semiconductor laser device and manufacture thereof |
JPH021387B2 (en) * | 1983-01-14 | 1990-01-11 | Tokyo Shibaura Electric Co | |
JPH021386B2 (en) * | 1983-01-14 | 1990-01-11 | Tokyo Shibaura Electric Co | |
JPH04155987A (en) * | 1990-10-19 | 1992-05-28 | Hikari Keisoku Gijutsu Kaihatsu Kk | Semiconductor distribution feedback laser device and its manufacture |
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