JPS5717494A - Manufacture of single crystal - Google Patents

Manufacture of single crystal

Info

Publication number
JPS5717494A
JPS5717494A JP8879280A JP8879280A JPS5717494A JP S5717494 A JPS5717494 A JP S5717494A JP 8879280 A JP8879280 A JP 8879280A JP 8879280 A JP8879280 A JP 8879280A JP S5717494 A JPS5717494 A JP S5717494A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
orientation
grown
low index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8879280A
Other languages
Japanese (ja)
Other versions
JPH0419195B2 (en
Inventor
Kazutaka Terajima
Shoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8879280A priority Critical patent/JPS5717494A/en
Publication of JPS5717494A publication Critical patent/JPS5717494A/en
Publication of JPH0419195B2 publication Critical patent/JPH0419195B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a high quality single crystal having a uniform impurity distribution by inclining the pulling direction of a single crystal by a prescribed angle from low index orientation <111>,<100> or <110> of the crystal.
CONSTITUTION: When a single crystal is grown from molten starting material by a pulling method, the pulling direction of the crystal is inclined by 5W10° from low index orientation <111>,<100> or <110> of the crystal. For example, an InSb single crystal doped with Ge and As is grown in orientation <111>, and a wafer is cut out from a part with solidification fraction g≈0.7. When spark mass analyses are conducted in the Y-shaped region A of the wafer shown by the oblique lines and the region B deviated from the Y-shaped region, an almost uniform impurity distribution is observed.
COPYRIGHT: (C)1982,JPO&Japio
JP8879280A 1980-06-30 1980-06-30 Manufacture of single crystal Granted JPS5717494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8879280A JPS5717494A (en) 1980-06-30 1980-06-30 Manufacture of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8879280A JPS5717494A (en) 1980-06-30 1980-06-30 Manufacture of single crystal

Publications (2)

Publication Number Publication Date
JPS5717494A true JPS5717494A (en) 1982-01-29
JPH0419195B2 JPH0419195B2 (en) 1992-03-30

Family

ID=13952691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8879280A Granted JPS5717494A (en) 1980-06-30 1980-06-30 Manufacture of single crystal

Country Status (1)

Country Link
JP (1) JPS5717494A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177781U (en) * 1984-10-26 1986-05-24
JPS61178491A (en) * 1985-01-31 1986-08-11 Nec Corp Method for pulling up single crystal
US7226506B2 (en) 2002-04-19 2007-06-05 Sumco Techxiv Corporation Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109896A (en) * 1980-02-01 1981-08-31 Hitachi Ltd Semiconductor single crystal and its growing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109896A (en) * 1980-02-01 1981-08-31 Hitachi Ltd Semiconductor single crystal and its growing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177781U (en) * 1984-10-26 1986-05-24
JPS61178491A (en) * 1985-01-31 1986-08-11 Nec Corp Method for pulling up single crystal
JPH0155239B2 (en) * 1985-01-31 1989-11-22 Nippon Electric Co
US7226506B2 (en) 2002-04-19 2007-06-05 Sumco Techxiv Corporation Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

Also Published As

Publication number Publication date
JPH0419195B2 (en) 1992-03-30

Similar Documents

Publication Publication Date Title
JPS5717494A (en) Manufacture of single crystal
JPS5738398A (en) Quartz glass crucible for pulling up silicon single crystal
JPS56109896A (en) Semiconductor single crystal and its growing method
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5276277A (en) Producing long and narrow crystal
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS57129899A (en) Manufacture of single crystal of 3-5 group compound semiconductor
JPS52138095A (en) Growth of sapphire single crystal
JPS51111057A (en) Crystal growing device
JPS5756399A (en) Manufacture of single crystal of compound with high decomposition pressure
JPS5485189A (en) Liquid phase epitaxial growth method
JPS5386158A (en) Production of semiconductor device
JPS52111473A (en) Ribbon crystal growth method
JPS5413475A (en) Preparation of single crystal
JPS5497585A (en) Manufacture of syngle crystal
JPS5362462A (en) Production of semiconductor divice
JPS52120763A (en) Silicon epitaxial growth method
JPS5286058A (en) Liquid phase epitaxial growth
JPS5261954A (en) Low dislocationdensity group iii-v compound semiconductor single cryst al
JPS534473A (en) Silicon semiconductor device
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS52154346A (en) Preparation of semiconductor crystal
JPS5684397A (en) Single crystal growing method
JPS5316400A (en) Production of piezoelectric oxide single crystal
JPS57156395A (en) Preparation of ferrite single crystal