JPS5717494A - Manufacture of single crystal - Google Patents
Manufacture of single crystalInfo
- Publication number
- JPS5717494A JPS5717494A JP8879280A JP8879280A JPS5717494A JP S5717494 A JPS5717494 A JP S5717494A JP 8879280 A JP8879280 A JP 8879280A JP 8879280 A JP8879280 A JP 8879280A JP S5717494 A JPS5717494 A JP S5717494A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- orientation
- grown
- low index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain a high quality single crystal having a uniform impurity distribution by inclining the pulling direction of a single crystal by a prescribed angle from low index orientation <111>,<100> or <110> of the crystal.
CONSTITUTION: When a single crystal is grown from molten starting material by a pulling method, the pulling direction of the crystal is inclined by 5W10° from low index orientation <111>,<100> or <110> of the crystal. For example, an InSb single crystal doped with Ge and As is grown in orientation <111>, and a wafer is cut out from a part with solidification fraction g≈0.7. When spark mass analyses are conducted in the Y-shaped region A of the wafer shown by the oblique lines and the region B deviated from the Y-shaped region, an almost uniform impurity distribution is observed.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8879280A JPS5717494A (en) | 1980-06-30 | 1980-06-30 | Manufacture of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8879280A JPS5717494A (en) | 1980-06-30 | 1980-06-30 | Manufacture of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5717494A true JPS5717494A (en) | 1982-01-29 |
JPH0419195B2 JPH0419195B2 (en) | 1992-03-30 |
Family
ID=13952691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8879280A Granted JPS5717494A (en) | 1980-06-30 | 1980-06-30 | Manufacture of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717494A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177781U (en) * | 1984-10-26 | 1986-05-24 | ||
JPS61178491A (en) * | 1985-01-31 | 1986-08-11 | Nec Corp | Method for pulling up single crystal |
US7226506B2 (en) | 2002-04-19 | 2007-06-05 | Sumco Techxiv Corporation | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56109896A (en) * | 1980-02-01 | 1981-08-31 | Hitachi Ltd | Semiconductor single crystal and its growing method |
-
1980
- 1980-06-30 JP JP8879280A patent/JPS5717494A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56109896A (en) * | 1980-02-01 | 1981-08-31 | Hitachi Ltd | Semiconductor single crystal and its growing method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6177781U (en) * | 1984-10-26 | 1986-05-24 | ||
JPS61178491A (en) * | 1985-01-31 | 1986-08-11 | Nec Corp | Method for pulling up single crystal |
JPH0155239B2 (en) * | 1985-01-31 | 1989-11-22 | Nippon Electric Co | |
US7226506B2 (en) | 2002-04-19 | 2007-06-05 | Sumco Techxiv Corporation | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
Also Published As
Publication number | Publication date |
---|---|
JPH0419195B2 (en) | 1992-03-30 |
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