JPS5684397A - Single crystal growing method - Google Patents

Single crystal growing method

Info

Publication number
JPS5684397A
JPS5684397A JP15769679A JP15769679A JPS5684397A JP S5684397 A JPS5684397 A JP S5684397A JP 15769679 A JP15769679 A JP 15769679A JP 15769679 A JP15769679 A JP 15769679A JP S5684397 A JPS5684397 A JP S5684397A
Authority
JP
Japan
Prior art keywords
ingot
melt
starting material
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15769679A
Other languages
Japanese (ja)
Inventor
Fumio Shimura
Tsutomu Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15769679A priority Critical patent/JPS5684397A/en
Publication of JPS5684397A publication Critical patent/JPS5684397A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make the impurity concn. of a grown crystal uniform by using a specified ingot as a starting material ingot to be put in a starting material melt in a push-pull pulling method.
CONSTITUTION: Quartz crucible 1 composed of two cylindrical parts connected to each other at the bottoms is filled with a fixed amount of starting material melt 2. On the other hand, starting material ingot 9 equal to desired grown crystal 4 in form is prepared by pulling from a melt having the same composition as the composition of melt 2, and grown crystal 4 is pulled to form the desired single crystal while putting ingot 9 in melt 2 at the same speed as the crystal pulling speed. Since ingot 9 is not necessarily required to be a single crystal one and may be polycrystalline, it is manufactured very easily.
COPYRIGHT: (C)1981,JPO&Japio
JP15769679A 1979-12-05 1979-12-05 Single crystal growing method Pending JPS5684397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15769679A JPS5684397A (en) 1979-12-05 1979-12-05 Single crystal growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15769679A JPS5684397A (en) 1979-12-05 1979-12-05 Single crystal growing method

Publications (1)

Publication Number Publication Date
JPS5684397A true JPS5684397A (en) 1981-07-09

Family

ID=15655376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15769679A Pending JPS5684397A (en) 1979-12-05 1979-12-05 Single crystal growing method

Country Status (1)

Country Link
JP (1) JPS5684397A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087429A (en) * 1988-04-28 1992-02-11 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107985A (en) * 1973-02-19 1974-10-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107985A (en) * 1973-02-19 1974-10-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087321A (en) * 1987-12-08 1992-02-11 Nkk Corporation Manufacturing method and equipment of single silicon crystal
US5087429A (en) * 1988-04-28 1992-02-11 Nkk Corporation Method and apparatus for manufacturing silicon single crystals

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