JPS5684397A - Single crystal growing method - Google Patents
Single crystal growing methodInfo
- Publication number
- JPS5684397A JPS5684397A JP15769679A JP15769679A JPS5684397A JP S5684397 A JPS5684397 A JP S5684397A JP 15769679 A JP15769679 A JP 15769679A JP 15769679 A JP15769679 A JP 15769679A JP S5684397 A JPS5684397 A JP S5684397A
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- melt
- starting material
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To make the impurity concn. of a grown crystal uniform by using a specified ingot as a starting material ingot to be put in a starting material melt in a push-pull pulling method.
CONSTITUTION: Quartz crucible 1 composed of two cylindrical parts connected to each other at the bottoms is filled with a fixed amount of starting material melt 2. On the other hand, starting material ingot 9 equal to desired grown crystal 4 in form is prepared by pulling from a melt having the same composition as the composition of melt 2, and grown crystal 4 is pulled to form the desired single crystal while putting ingot 9 in melt 2 at the same speed as the crystal pulling speed. Since ingot 9 is not necessarily required to be a single crystal one and may be polycrystalline, it is manufactured very easily.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15769679A JPS5684397A (en) | 1979-12-05 | 1979-12-05 | Single crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15769679A JPS5684397A (en) | 1979-12-05 | 1979-12-05 | Single crystal growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5684397A true JPS5684397A (en) | 1981-07-09 |
Family
ID=15655376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15769679A Pending JPS5684397A (en) | 1979-12-05 | 1979-12-05 | Single crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5684397A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087429A (en) * | 1988-04-28 | 1992-02-11 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
US5087321A (en) * | 1987-12-08 | 1992-02-11 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107985A (en) * | 1973-02-19 | 1974-10-14 |
-
1979
- 1979-12-05 JP JP15769679A patent/JPS5684397A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107985A (en) * | 1973-02-19 | 1974-10-14 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5087321A (en) * | 1987-12-08 | 1992-02-11 | Nkk Corporation | Manufacturing method and equipment of single silicon crystal |
US5087429A (en) * | 1988-04-28 | 1992-02-11 | Nkk Corporation | Method and apparatus for manufacturing silicon single crystals |
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