JPS5560093A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS5560093A JPS5560093A JP13043478A JP13043478A JPS5560093A JP S5560093 A JPS5560093 A JP S5560093A JP 13043478 A JP13043478 A JP 13043478A JP 13043478 A JP13043478 A JP 13043478A JP S5560093 A JPS5560093 A JP S5560093A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- central position
- crystal
- litao
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To easily produce a high quality, long size single crystal without bending in pulling by gradually expanding the gap between the central position of the depth of a crucible and the central position of the length of a heater as a single crystal becomes longer by growing.
CONSTITUTION: A high m.p. oxide such as LiTaO3 is put into Pt-Rh crucible 3, RF coil 7 is electrified to melt the LiTaO3, and LiTaO3 single crystal 11 is pulled with seed crystal 10. As crystal 11 becomes longer, gap ΔH between central position H1/2 of coil 7 and central position H2/2 of crucible 3 is expanded gradually. At this time, it is required to grow crystal 11 while maintaining ΔH=-10W-50mm. As a result, by controlling convection currents in melt 8 of a proper temp. distribution, an oxide single crystal is obtd. without bending in pulling.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13043478A JPS5560093A (en) | 1978-10-25 | 1978-10-25 | Production of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13043478A JPS5560093A (en) | 1978-10-25 | 1978-10-25 | Production of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5560093A true JPS5560093A (en) | 1980-05-06 |
JPS6126519B2 JPS6126519B2 (en) | 1986-06-20 |
Family
ID=15034136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13043478A Granted JPS5560093A (en) | 1978-10-25 | 1978-10-25 | Production of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5560093A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913692A (en) * | 1982-07-15 | 1984-01-24 | Hitachi Chem Co Ltd | Growing method of bi4(ge, si)3o12 single crystal |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0737140U (en) * | 1993-12-18 | 1995-07-11 | 明伸興産株式会社 | Nursing slide transfer device |
-
1978
- 1978-10-25 JP JP13043478A patent/JPS5560093A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5913692A (en) * | 1982-07-15 | 1984-01-24 | Hitachi Chem Co Ltd | Growing method of bi4(ge, si)3o12 single crystal |
JPH032838B2 (en) * | 1982-07-15 | 1991-01-17 | Hitachi Chemical Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6126519B2 (en) | 1986-06-20 |
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