JPS56100195A - Growing method for semiconductor single crystal - Google Patents

Growing method for semiconductor single crystal

Info

Publication number
JPS56100195A
JPS56100195A JP59880A JP59880A JPS56100195A JP S56100195 A JPS56100195 A JP S56100195A JP 59880 A JP59880 A JP 59880A JP 59880 A JP59880 A JP 59880A JP S56100195 A JPS56100195 A JP S56100195A
Authority
JP
Japan
Prior art keywords
crystal
seed
pulling
melt
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59880A
Other languages
Japanese (ja)
Inventor
Hirobumi Shimizu
Keigo Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP59880A priority Critical patent/JPS56100195A/en
Publication of JPS56100195A publication Critical patent/JPS56100195A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To prevent dislocation and grow a semiconductor single crystal free from minute defects by pulling up a seed crystal from a melt at a higher initial pulling speed to grow a crystal of a fixed diameter by a fixed length and heating the grown crystal body to make the temp. difference between it and the melt smaller.
CONSTITUTION: In the Czochralski method a crystal is grown by fixed length (l) or more while reducing the diameter just below speed 3 to form neck 8 by bringing seed 3 into contact with Si polycrystal melt 2 in crucible 1 and pulling up seed 3 at a higher initial pulling speed. The crystal is then grown by pulling up seed 3 at an ordinary pulling speed. At this time, in order to make the temp. difference between crystal body 4 and melt 2 smaller, body 4 is heated with vertically movable heater 9 placed around body 4. Thus, dislocation is set free from the crystal surface, and the occurrence of minute defects is controlled from seed 3 to the shoulder of body 4 to reduce central sites generating nuclei of dislocation.
COPYRIGHT: (C)1981,JPO&Japio
JP59880A 1980-01-09 1980-01-09 Growing method for semiconductor single crystal Pending JPS56100195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59880A JPS56100195A (en) 1980-01-09 1980-01-09 Growing method for semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59880A JPS56100195A (en) 1980-01-09 1980-01-09 Growing method for semiconductor single crystal

Publications (1)

Publication Number Publication Date
JPS56100195A true JPS56100195A (en) 1981-08-11

Family

ID=11478164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59880A Pending JPS56100195A (en) 1980-01-09 1980-01-09 Growing method for semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS56100195A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267195A (en) * 1989-04-05 1990-10-31 Nippon Steel Corp Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof
JPH0393700A (en) * 1989-09-04 1991-04-18 Nippon Steel Corp Heat treating method and device of silicon single crystal and production device thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267195A (en) * 1989-04-05 1990-10-31 Nippon Steel Corp Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof
JPH0393700A (en) * 1989-09-04 1991-04-18 Nippon Steel Corp Heat treating method and device of silicon single crystal and production device thereof

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