JPS56100195A - Growing method for semiconductor single crystal - Google Patents
Growing method for semiconductor single crystalInfo
- Publication number
- JPS56100195A JPS56100195A JP59880A JP59880A JPS56100195A JP S56100195 A JPS56100195 A JP S56100195A JP 59880 A JP59880 A JP 59880A JP 59880 A JP59880 A JP 59880A JP S56100195 A JPS56100195 A JP S56100195A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- seed
- pulling
- melt
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To prevent dislocation and grow a semiconductor single crystal free from minute defects by pulling up a seed crystal from a melt at a higher initial pulling speed to grow a crystal of a fixed diameter by a fixed length and heating the grown crystal body to make the temp. difference between it and the melt smaller.
CONSTITUTION: In the Czochralski method a crystal is grown by fixed length (l) or more while reducing the diameter just below speed 3 to form neck 8 by bringing seed 3 into contact with Si polycrystal melt 2 in crucible 1 and pulling up seed 3 at a higher initial pulling speed. The crystal is then grown by pulling up seed 3 at an ordinary pulling speed. At this time, in order to make the temp. difference between crystal body 4 and melt 2 smaller, body 4 is heated with vertically movable heater 9 placed around body 4. Thus, dislocation is set free from the crystal surface, and the occurrence of minute defects is controlled from seed 3 to the shoulder of body 4 to reduce central sites generating nuclei of dislocation.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59880A JPS56100195A (en) | 1980-01-09 | 1980-01-09 | Growing method for semiconductor single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59880A JPS56100195A (en) | 1980-01-09 | 1980-01-09 | Growing method for semiconductor single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56100195A true JPS56100195A (en) | 1981-08-11 |
Family
ID=11478164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59880A Pending JPS56100195A (en) | 1980-01-09 | 1980-01-09 | Growing method for semiconductor single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100195A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
JPH0393700A (en) * | 1989-09-04 | 1991-04-18 | Nippon Steel Corp | Heat treating method and device of silicon single crystal and production device thereof |
-
1980
- 1980-01-09 JP JP59880A patent/JPS56100195A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
JPH0393700A (en) * | 1989-09-04 | 1991-04-18 | Nippon Steel Corp | Heat treating method and device of silicon single crystal and production device thereof |
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