JPS57118091A - Manufacturing apparatus for beltlike silicon crystal - Google Patents

Manufacturing apparatus for beltlike silicon crystal

Info

Publication number
JPS57118091A
JPS57118091A JP17381A JP17381A JPS57118091A JP S57118091 A JPS57118091 A JP S57118091A JP 17381 A JP17381 A JP 17381A JP 17381 A JP17381 A JP 17381A JP S57118091 A JPS57118091 A JP S57118091A
Authority
JP
Japan
Prior art keywords
plate
temp
die
beltlike
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17381A
Other languages
Japanese (ja)
Inventor
Toshiyuki Sawada
Naoaki Maki
Toshiro Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17381A priority Critical patent/JPS57118091A/en
Publication of JPS57118091A publication Critical patent/JPS57118091A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a beltlike silicon crystal in a high yield by placing a heat shielding plate over a crucible and setting 2 temp. regulating members movable in contact with the plate on the plate to make the temp. distribution uniform.
CONSTITUTION: A capillary die 13 having a slit is put in a crucible 12 holding molten silicon 11, and a seed crystal is brought into contact with molten silicon 11 rising through the slit to pull up a beltlike silicon crystal. In this apparatus a heat shielding plate 14 having a window exposing the tip of the die 13 is placed over the crucible 12, and 2 temp. regulating members 19a, 19b movable in contact with the plate 14 are set on the plate 14 at parts close to both ends of the die 13 in the longitudinal direction. The temp. distribution can be corrected effectively with the members 19a, 19b, the temp. gradient at an upper part of the die 13 can be made steep with the plate 14, and beltlike silicon can be grown in ≥80% yield.
COPYRIGHT: (C)1982,JPO&Japio
JP17381A 1981-01-06 1981-01-06 Manufacturing apparatus for beltlike silicon crystal Pending JPS57118091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17381A JPS57118091A (en) 1981-01-06 1981-01-06 Manufacturing apparatus for beltlike silicon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17381A JPS57118091A (en) 1981-01-06 1981-01-06 Manufacturing apparatus for beltlike silicon crystal

Publications (1)

Publication Number Publication Date
JPS57118091A true JPS57118091A (en) 1982-07-22

Family

ID=11466611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17381A Pending JPS57118091A (en) 1981-01-06 1981-01-06 Manufacturing apparatus for beltlike silicon crystal

Country Status (1)

Country Link
JP (1) JPS57118091A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016767U (en) * 1984-06-28 1985-02-04 工業技術院長 Band-shaped silicon crystal production equipment
CN102560630A (en) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof
CN102517630B (en) * 2004-04-08 2015-10-07 圣戈本陶瓷及塑料股份有限公司 Monocrystalline and manufacture method thereof
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016767U (en) * 1984-06-28 1985-02-04 工業技術院長 Band-shaped silicon crystal production equipment
CN102517630B (en) * 2004-04-08 2015-10-07 圣戈本陶瓷及塑料股份有限公司 Monocrystalline and manufacture method thereof
US9926645B2 (en) 2004-04-08 2018-03-27 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a single crystal sheet using a die having a thermal gradient along its length
US9963800B2 (en) 2004-04-08 2018-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of making a sapphire component including machining a sapphire single crystal
CN102560630A (en) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

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