JPS57196796A - Growing apparatus for beltlike silicon crystal - Google Patents

Growing apparatus for beltlike silicon crystal

Info

Publication number
JPS57196796A
JPS57196796A JP8013281A JP8013281A JPS57196796A JP S57196796 A JPS57196796 A JP S57196796A JP 8013281 A JP8013281 A JP 8013281A JP 8013281 A JP8013281 A JP 8013281A JP S57196796 A JPS57196796 A JP S57196796A
Authority
JP
Japan
Prior art keywords
crystal
beltlike
rollers
thickness
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8013281A
Other languages
Japanese (ja)
Other versions
JPS5932432B2 (en
Inventor
Naoaki Maki
Masanaru Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8013281A priority Critical patent/JPS5932432B2/en
Publication of JPS57196796A publication Critical patent/JPS57196796A/en
Publication of JPS5932432B2 publication Critical patent/JPS5932432B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To manufacture a beltlike Si crystal with slight changes in the thickness and width by passing a beltlike Si crystal pulled up with a capillary die through rollers for regulating changes in the thickness and width of the crystal at a place right above the die.
CONSTITUTION: A high purity Si melt 2 is charged into a crucible 1 made of quartz glass, a capillary die 3 made of artificial graphite is immersed in the melt 2, and a beltlike Si crystal 4 is pulled up with a seed crystal. At this time, rollers 11a, 11b made of high purity graphite are rotated at a place right above the die 3 to pull up the crystal 4 through the slot 12 having desired width and thickness for the crystal, and the crystal 4 is further pulled up with upper rollers 5aW5d. By passing through the slot 12 between the rollers 11a, 11b the crystal 4 is provided with a uniform width without weaving in the lateral direction, and it is also provided with a uniform thickness.
COPYRIGHT: (C)1982,JPO&Japio
JP8013281A 1981-05-28 1981-05-28 Band-shaped silicon crystal growth device Expired JPS5932432B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8013281A JPS5932432B2 (en) 1981-05-28 1981-05-28 Band-shaped silicon crystal growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8013281A JPS5932432B2 (en) 1981-05-28 1981-05-28 Band-shaped silicon crystal growth device

Publications (2)

Publication Number Publication Date
JPS57196796A true JPS57196796A (en) 1982-12-02
JPS5932432B2 JPS5932432B2 (en) 1984-08-08

Family

ID=13709702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8013281A Expired JPS5932432B2 (en) 1981-05-28 1981-05-28 Band-shaped silicon crystal growth device

Country Status (1)

Country Link
JP (1) JPS5932432B2 (en)

Also Published As

Publication number Publication date
JPS5932432B2 (en) 1984-08-08

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