JPS56114894A - Method and apparatus for preparation of single crystal - Google Patents
Method and apparatus for preparation of single crystalInfo
- Publication number
- JPS56114894A JPS56114894A JP1872380A JP1872380A JPS56114894A JP S56114894 A JPS56114894 A JP S56114894A JP 1872380 A JP1872380 A JP 1872380A JP 1872380 A JP1872380 A JP 1872380A JP S56114894 A JPS56114894 A JP S56114894A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- molten liquid
- pulled
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prepare a single crystal having uniform composition along the direction of pulling, by carrying out the pulling of the single crystal from the molten liquid in a crucible while feeding a molten liquid having a composition same to that of the single crystal to the crucible at a rate corresponding to the pulled amount of the single crystal.
CONSTITUTION: A composition composed of 97mol% of LiNbO3 and 3mol% of LiTaO3 is put into a crucible 2. A crucible 10 containing a composition composed of 87mol% of LiNbO3 and 13mol% of LiTaO3 is supported by a supporting means 14. The crucibles 2 and 10 are heated by a heating means 17 to obtain the molten liquid for crystal growth 1 in the crucible 2 and the molten liquid for replenishment 9 in the crucible 10. Then, the single crystal 20 is pulled up from the molten liquid 1 by operating a driving means 23, the heating means 17 and the pulling means 19. By the controlled drive of the driving means 23, the molten liquid 9 for replenishment in the crucible 10 is fed to the crucible 2 through the hole 8 at a rate corresponding to the amount of the pulled single crystal 20. Consequently, the ratio of LiNbO3/LiTaO3 in the composition, the temperature, and the quantity of the molten liquid in the crucible 2 are maintained at definite levels independent to the pulled amount of the single crystal 20.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1872380A JPS5815474B2 (en) | 1980-02-18 | 1980-02-18 | Single crystal manufacturing method and equipment used for it |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1872380A JPS5815474B2 (en) | 1980-02-18 | 1980-02-18 | Single crystal manufacturing method and equipment used for it |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56114894A true JPS56114894A (en) | 1981-09-09 |
JPS5815474B2 JPS5815474B2 (en) | 1983-03-25 |
Family
ID=11979575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1872380A Expired JPS5815474B2 (en) | 1980-02-18 | 1980-02-18 | Single crystal manufacturing method and equipment used for it |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5815474B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01290590A (en) * | 1988-05-19 | 1989-11-22 | Sumitomo Electric Ind Ltd | Production of non-doped compound semiconductor single crystal |
-
1980
- 1980-02-18 JP JP1872380A patent/JPS5815474B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01290590A (en) * | 1988-05-19 | 1989-11-22 | Sumitomo Electric Ind Ltd | Production of non-doped compound semiconductor single crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS5815474B2 (en) | 1983-03-25 |
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