JPS56114894A - Method and apparatus for preparation of single crystal - Google Patents

Method and apparatus for preparation of single crystal

Info

Publication number
JPS56114894A
JPS56114894A JP1872380A JP1872380A JPS56114894A JP S56114894 A JPS56114894 A JP S56114894A JP 1872380 A JP1872380 A JP 1872380A JP 1872380 A JP1872380 A JP 1872380A JP S56114894 A JPS56114894 A JP S56114894A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
molten liquid
pulled
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1872380A
Other languages
Japanese (ja)
Other versions
JPS5815474B2 (en
Inventor
Susumu Kondo
Shintaro Miyazawa
Yasutaka Suemune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1872380A priority Critical patent/JPS5815474B2/en
Publication of JPS56114894A publication Critical patent/JPS56114894A/en
Publication of JPS5815474B2 publication Critical patent/JPS5815474B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prepare a single crystal having uniform composition along the direction of pulling, by carrying out the pulling of the single crystal from the molten liquid in a crucible while feeding a molten liquid having a composition same to that of the single crystal to the crucible at a rate corresponding to the pulled amount of the single crystal.
CONSTITUTION: A composition composed of 97mol% of LiNbO3 and 3mol% of LiTaO3 is put into a crucible 2. A crucible 10 containing a composition composed of 87mol% of LiNbO3 and 13mol% of LiTaO3 is supported by a supporting means 14. The crucibles 2 and 10 are heated by a heating means 17 to obtain the molten liquid for crystal growth 1 in the crucible 2 and the molten liquid for replenishment 9 in the crucible 10. Then, the single crystal 20 is pulled up from the molten liquid 1 by operating a driving means 23, the heating means 17 and the pulling means 19. By the controlled drive of the driving means 23, the molten liquid 9 for replenishment in the crucible 10 is fed to the crucible 2 through the hole 8 at a rate corresponding to the amount of the pulled single crystal 20. Consequently, the ratio of LiNbO3/LiTaO3 in the composition, the temperature, and the quantity of the molten liquid in the crucible 2 are maintained at definite levels independent to the pulled amount of the single crystal 20.
COPYRIGHT: (C)1981,JPO&Japio
JP1872380A 1980-02-18 1980-02-18 Single crystal manufacturing method and equipment used for it Expired JPS5815474B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1872380A JPS5815474B2 (en) 1980-02-18 1980-02-18 Single crystal manufacturing method and equipment used for it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1872380A JPS5815474B2 (en) 1980-02-18 1980-02-18 Single crystal manufacturing method and equipment used for it

Publications (2)

Publication Number Publication Date
JPS56114894A true JPS56114894A (en) 1981-09-09
JPS5815474B2 JPS5815474B2 (en) 1983-03-25

Family

ID=11979575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1872380A Expired JPS5815474B2 (en) 1980-02-18 1980-02-18 Single crystal manufacturing method and equipment used for it

Country Status (1)

Country Link
JP (1) JPS5815474B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290590A (en) * 1988-05-19 1989-11-22 Sumitomo Electric Ind Ltd Production of non-doped compound semiconductor single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01290590A (en) * 1988-05-19 1989-11-22 Sumitomo Electric Ind Ltd Production of non-doped compound semiconductor single crystal

Also Published As

Publication number Publication date
JPS5815474B2 (en) 1983-03-25

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