JPS6461383A - Method for pulling up single crystal rod and apparatus therefor - Google Patents
Method for pulling up single crystal rod and apparatus thereforInfo
- Publication number
- JPS6461383A JPS6461383A JP21848587A JP21848587A JPS6461383A JP S6461383 A JPS6461383 A JP S6461383A JP 21848587 A JP21848587 A JP 21848587A JP 21848587 A JP21848587 A JP 21848587A JP S6461383 A JPS6461383 A JP S6461383A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal rod
- molten liquid
- prescribed
- parallel part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a single crystal rod having excellent processability, by providing a specific guide board having a part parallel to the surface of molten liquid, placing the board between a crucible wall and a single crystal rod to be pulled up from the molten liquid and pulling up the single crystal rod under controlled flow rate of inert gas, length of the parallel part, etc., thereby excluding harmful components in high efficiency and controlling the oxygen concentration. CONSTITUTION:A single crystal rod 6 is pulled up via a seed crystal 5 from a molten liquid 4 heated and melted in a crucible 3 positioned in a chamber 1 with a heater 2. The above pulling up apparatus is provided with a guide board 10 having a slant face 10a gradually approaching toward the single crystal rod 6 and a parallel part 10b having a prescribed length (d) along the surface of the molten liquid 4. The board 10 is disposed in such a manner as to keep a prescribed gap (D) between the surface of the molten liquid 4 and the parallel part 10b. An inert gas 8 is introduced through an inlet port at a prescribed flow rate (F). The single crystal rod 6 is grown while controlling at least one of the factors selected from the flow rate F, the length (d) of the parallel part and the gap D at respective prescribed level to achieve the target oxygen concentration of the grown single crystal rod while thoroughly contacting the inert gas 8 with the surface of the molten liquid 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21848587A JPS6461383A (en) | 1987-08-31 | 1987-08-31 | Method for pulling up single crystal rod and apparatus therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21848587A JPS6461383A (en) | 1987-08-31 | 1987-08-31 | Method for pulling up single crystal rod and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461383A true JPS6461383A (en) | 1989-03-08 |
Family
ID=16720663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21848587A Pending JPS6461383A (en) | 1987-08-31 | 1987-08-31 | Method for pulling up single crystal rod and apparatus therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461383A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465086A (en) * | 1987-09-05 | 1989-03-10 | Shinetsu Handotai Kk | Apparatus and process for producing single crystal rod |
JPH01160891A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Apparatus for pulling up single crystal |
JPH01160893A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Method for controlling oxygen concentration in silicon single crystal |
JPH01160892A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Method for controlling oxygen concentration in silicon single crystal |
JPH03122089A (en) * | 1989-10-05 | 1991-05-24 | Shin Etsu Handotai Co Ltd | Method for regulating oxygen concentration in si single crystal and apparatus therefor |
JPH05279172A (en) * | 1991-04-20 | 1993-10-26 | Komatsu Denshi Kinzoku Kk | Method and apparatus for growing crystal |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
JPS62138384A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Method and device for pulling single crystal |
-
1987
- 1987-08-31 JP JP21848587A patent/JPS6461383A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
JPS62138384A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Method and device for pulling single crystal |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465086A (en) * | 1987-09-05 | 1989-03-10 | Shinetsu Handotai Kk | Apparatus and process for producing single crystal rod |
JPH01160891A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Apparatus for pulling up single crystal |
JPH01160893A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Method for controlling oxygen concentration in silicon single crystal |
JPH01160892A (en) * | 1987-12-16 | 1989-06-23 | Mitsubishi Metal Corp | Method for controlling oxygen concentration in silicon single crystal |
JPH03122089A (en) * | 1989-10-05 | 1991-05-24 | Shin Etsu Handotai Co Ltd | Method for regulating oxygen concentration in si single crystal and apparatus therefor |
JPH05279172A (en) * | 1991-04-20 | 1993-10-26 | Komatsu Denshi Kinzoku Kk | Method and apparatus for growing crystal |
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