JPS57206012A - Vertical type liquid epitaxial growing device - Google Patents

Vertical type liquid epitaxial growing device

Info

Publication number
JPS57206012A
JPS57206012A JP9122581A JP9122581A JPS57206012A JP S57206012 A JPS57206012 A JP S57206012A JP 9122581 A JP9122581 A JP 9122581A JP 9122581 A JP9122581 A JP 9122581A JP S57206012 A JPS57206012 A JP S57206012A
Authority
JP
Japan
Prior art keywords
furnace
substrate
section
liquid epitaxial
type liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9122581A
Other languages
Japanese (ja)
Inventor
Mikio Tanabe
Yasusuke Akai
Fumio Muramatsu
Shuichi Nakamura
Tetsuo Suzaki
Kazuo Hiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9122581A priority Critical patent/JPS57206012A/en
Publication of JPS57206012A publication Critical patent/JPS57206012A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To control temperature distribution in a furnace uniformly, by a method wherein a vertical furnace is divided into a section for pre-heating and slow cooling and a film producing furnace section, and a shutter is installed at dividing portion.
CONSTITUTION: A vertical furnace 3 is divided into a furnace section 3a which pre-heats a substrate 1 and cools it slowly and a furnace section 3b which makes a liquid epitaxial film grow, and a shutter mechanism 2b is installed at dividing portion. A holder 4 to hold the substrate 1 is supported by a support shaft 11. Gas is introduced from a gas introducing path 12 into the furnace sections 3a, 3b and exhausted out of the discharge ports 13a, 13b. The holder is moved to the furnace 3a, the shutter mechanism 2a is closed, the substrate 1 is pre-heated, and then the shutter mechanism 2b is opened and the substrate 1 is moved to the furnace section 3b. The mechanism 2 is closed and then immersed in a pot 6 thereby liquid epitaxial film is grown.
COPYRIGHT: (C)1982,JPO&Japio
JP9122581A 1981-06-12 1981-06-12 Vertical type liquid epitaxial growing device Pending JPS57206012A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9122581A JPS57206012A (en) 1981-06-12 1981-06-12 Vertical type liquid epitaxial growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9122581A JPS57206012A (en) 1981-06-12 1981-06-12 Vertical type liquid epitaxial growing device

Publications (1)

Publication Number Publication Date
JPS57206012A true JPS57206012A (en) 1982-12-17

Family

ID=14020474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9122581A Pending JPS57206012A (en) 1981-06-12 1981-06-12 Vertical type liquid epitaxial growing device

Country Status (1)

Country Link
JP (1) JPS57206012A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5603762A (en) * 1994-05-31 1997-02-18 Ngk Insulators, Ltd. Process and apparatus for the production of films of oxide type single crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5603762A (en) * 1994-05-31 1997-02-18 Ngk Insulators, Ltd. Process and apparatus for the production of films of oxide type single crystal

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