JPS57206011A - Horizontal type liquid epitaxial growing device - Google Patents
Horizontal type liquid epitaxial growing deviceInfo
- Publication number
- JPS57206011A JPS57206011A JP9122481A JP9122481A JPS57206011A JP S57206011 A JPS57206011 A JP S57206011A JP 9122481 A JP9122481 A JP 9122481A JP 9122481 A JP9122481 A JP 9122481A JP S57206011 A JPS57206011 A JP S57206011A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- substrate
- section
- shaft
- liquid epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To control temperature distribution in a furnace accurately, by a method wherein a horizontal furnace is employed and a shutter mechanism is installed in an opening of a section for pre-heating and slow cooling in the furnace. CONSTITUTION:A horizontal furnace 4 is divided into a furnace section 4a which pre-heats a substrate 8 and cools it slowly and a furnace section 4b which makes a liquid epitaxial film grow. A shutter mechanism 1a is installed in an opening of the furnace section 4a for pre-heating and slow cooling. A holder 7 to hold the the substrate 8 is supported by a support shaft 6 and moved in the furnace sections 4a, 4b by moving the shaft 6 in the axial direction. The shaft 6 moves the substance 8 in the furnace section 4a and the substance 8 is pre-heated after closing the shutter. Then, the shaft 6 moves the substrate 8 in the furnace section 4b where the substrate 8 is immersed within a solution 2 in a pot 3 and rotated along a circular arc thereby a liquid epitaxial film is grown on the substrate 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9122481A JPS57206011A (en) | 1981-06-12 | 1981-06-12 | Horizontal type liquid epitaxial growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9122481A JPS57206011A (en) | 1981-06-12 | 1981-06-12 | Horizontal type liquid epitaxial growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57206011A true JPS57206011A (en) | 1982-12-17 |
Family
ID=14020444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9122481A Pending JPS57206011A (en) | 1981-06-12 | 1981-06-12 | Horizontal type liquid epitaxial growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57206011A (en) |
-
1981
- 1981-06-12 JP JP9122481A patent/JPS57206011A/en active Pending
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