JPS57206011A - Horizontal type liquid epitaxial growing device - Google Patents

Horizontal type liquid epitaxial growing device

Info

Publication number
JPS57206011A
JPS57206011A JP9122481A JP9122481A JPS57206011A JP S57206011 A JPS57206011 A JP S57206011A JP 9122481 A JP9122481 A JP 9122481A JP 9122481 A JP9122481 A JP 9122481A JP S57206011 A JPS57206011 A JP S57206011A
Authority
JP
Japan
Prior art keywords
furnace
substrate
section
shaft
liquid epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9122481A
Other languages
Japanese (ja)
Inventor
Mikio Tanabe
Yasusuke Akai
Fumio Muramatsu
Shuichi Nakamura
Kazuo Hiura
Tetsuo Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP9122481A priority Critical patent/JPS57206011A/en
Publication of JPS57206011A publication Critical patent/JPS57206011A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To control temperature distribution in a furnace accurately, by a method wherein a horizontal furnace is employed and a shutter mechanism is installed in an opening of a section for pre-heating and slow cooling in the furnace. CONSTITUTION:A horizontal furnace 4 is divided into a furnace section 4a which pre-heats a substrate 8 and cools it slowly and a furnace section 4b which makes a liquid epitaxial film grow. A shutter mechanism 1a is installed in an opening of the furnace section 4a for pre-heating and slow cooling. A holder 7 to hold the the substrate 8 is supported by a support shaft 6 and moved in the furnace sections 4a, 4b by moving the shaft 6 in the axial direction. The shaft 6 moves the substance 8 in the furnace section 4a and the substance 8 is pre-heated after closing the shutter. Then, the shaft 6 moves the substrate 8 in the furnace section 4b where the substrate 8 is immersed within a solution 2 in a pot 3 and rotated along a circular arc thereby a liquid epitaxial film is grown on the substrate 8.
JP9122481A 1981-06-12 1981-06-12 Horizontal type liquid epitaxial growing device Pending JPS57206011A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9122481A JPS57206011A (en) 1981-06-12 1981-06-12 Horizontal type liquid epitaxial growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9122481A JPS57206011A (en) 1981-06-12 1981-06-12 Horizontal type liquid epitaxial growing device

Publications (1)

Publication Number Publication Date
JPS57206011A true JPS57206011A (en) 1982-12-17

Family

ID=14020444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9122481A Pending JPS57206011A (en) 1981-06-12 1981-06-12 Horizontal type liquid epitaxial growing device

Country Status (1)

Country Link
JP (1) JPS57206011A (en)

Similar Documents

Publication Publication Date Title
DE69833018T2 (en) QUICK HEAT TREATMENT PLANT WITH CIRCULAR SUBSTRATE
US5993540A (en) Continuous crystal plate growth process and apparatus
GB1068223A (en) Crystal growing method and apparatus
US3507625A (en) Apparatus for producing binary crystalline compounds
JPS57206011A (en) Horizontal type liquid epitaxial growing device
TW344100B (en) Semiconductor liquid phase epitaxial growth method and apparatus
US4604262A (en) Apparatus for positioning and locating a baffle plate in a crucible
GB1476915A (en) Drawing crystals from a melt
ES424495A1 (en) Method and device for heating open melting baths, especially galvanizing baths, enameling baths and glass baths
JPS57179099A (en) Manufacturing apparatus for silicon single crystal
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
JPS57206012A (en) Vertical type liquid epitaxial growing device
GB1073587A (en) A method for the production and control of translatory motion in processes for the manufacture of shaped semiconductors
JPS552213A (en) Developing method
GB1025819A (en) Germanium deposition
JPS5582434A (en) Method of epitaxial growth at liquid phase
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPS57183393A (en) Apparatus for growing single crystal
JPS5490086A (en) Method of producing single crystal
JPS5815218A (en) Liquid phase epitaxial growth apparatus
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS5913257Y2 (en) Raw material addition mechanism of crystal growth furnace
JPS56114316A (en) Boat for liquid phase epitaxial growth
JPS61270297A (en) Apparatus for growing liquid-phase epitaxial film
HUT55843A (en) Process and apparatus for quick selfcontrolled cristal growing advantageously from melts or melt-solutions