GB1025819A - Germanium deposition - Google Patents

Germanium deposition

Info

Publication number
GB1025819A
GB1025819A GB10971/65A GB1097165A GB1025819A GB 1025819 A GB1025819 A GB 1025819A GB 10971/65 A GB10971/65 A GB 10971/65A GB 1097165 A GB1097165 A GB 1097165A GB 1025819 A GB1025819 A GB 1025819A
Authority
GB
United Kingdom
Prior art keywords
bed
substrate
passing
light
iodine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB10971/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1025819A publication Critical patent/GB1025819A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:1025819/C6-C7/1> Germanium is successively epitaxially deposited on and etched from a substrate 11 of Ge, GaAs, GaP or InSb by reacting HI in a H2 and He gas stream with a heated Ge bed 9 and passing this stream over the substrate at a lower temperature than the bed 9. Pulsed UV light from a Xenon source 12 irradiates the substrate Ge being deposited when the light is off and removed when the light is on, the pulse frequency may vary during the process. HI is formed by passing a mixed controlled flow of H2 and He through a heated iodine crystal bed 4 and then through a platinum wool catalyst chamber 8. In one example a single crystal substrate is continuously irradiated and the surface etched by the gas stream.ALSO:<PICT:1025819/C1/1> In a method of depositing Ge (see Division C7) HI is formed by passing a mixed controlled flow of H2 and He through an iodine crystal bed 4 in a thermostatically controlled oil bath at 50 DEG C. and then through a platinum wool catalyst chamber 8 at 300-400 DEG C. Sufficient hydrogen is provided to ensure complete conversion of iodine from the bed 4.
GB10971/65A 1964-04-02 1965-03-16 Germanium deposition Expired GB1025819A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US356850A US3345209A (en) 1964-04-02 1964-04-02 Growth control of disproportionation process

Publications (1)

Publication Number Publication Date
GB1025819A true GB1025819A (en) 1966-04-14

Family

ID=23403220

Family Applications (1)

Application Number Title Priority Date Filing Date
GB10971/65A Expired GB1025819A (en) 1964-04-02 1965-03-16 Germanium deposition

Country Status (3)

Country Link
US (1) US3345209A (en)
DE (1) DE1294356B (en)
GB (1) GB1025819A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700080A (en) * 1966-01-03 1967-07-04
US3503030A (en) * 1966-11-11 1970-03-24 Fujitsu Ltd Indirectly-heated thermistor
US3652331A (en) * 1968-03-22 1972-03-28 Shumpei Yamazaki Process for forming a film on the surface of a substrate by a gas phase
DE1769605A1 (en) * 1968-06-14 1971-07-01 Siemens Ag Method for producing epitaxial growth layers from semiconductor material for electrical components
JPS52915B1 (en) * 1971-06-01 1977-01-11
DE2829830C2 (en) * 1978-07-07 1986-06-05 Telefunken electronic GmbH, 7100 Heilbronn Epitaxial deposition method
US4910163A (en) * 1988-06-09 1990-03-20 University Of Connecticut Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en) * 1951-03-07 1900-01-01
US3190773A (en) * 1959-12-30 1965-06-22 Ibm Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
NL268294A (en) * 1960-10-10
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3200018A (en) * 1962-01-29 1965-08-10 Hughes Aircraft Co Controlled epitaxial crystal growth by focusing electromagnetic radiation

Also Published As

Publication number Publication date
US3345209A (en) 1967-10-03
DE1294356B (en) 1969-05-08

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