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Fujitsu Ltd
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Fujitsu Ltd
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Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP3333776ApriorityCriticalpatent/JPS52116071A/en
Publication of JPS52116071ApublicationCriticalpatent/JPS52116071A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
PURPOSE: To permit easy growth of a high quality crystal free from any bend by bringing a In-Ga-As solution into contact with a GaAs substrate and lowering the temperature at a rapid rate of 10 - 20°C per minute and subsequently at a slow rate.
COPYRIGHT: (C)1977,JPO&Japio
JP3333776A1976-03-251976-03-25Process for liquid phase epitaxial growth
PendingJPS52116071A
(en)