JPS52111473A - Ribbon crystal growth method - Google Patents

Ribbon crystal growth method

Info

Publication number
JPS52111473A
JPS52111473A JP2813776A JP2813776A JPS52111473A JP S52111473 A JPS52111473 A JP S52111473A JP 2813776 A JP2813776 A JP 2813776A JP 2813776 A JP2813776 A JP 2813776A JP S52111473 A JPS52111473 A JP S52111473A
Authority
JP
Japan
Prior art keywords
crystal growth
growth method
ribbon crystal
high temperature
growth interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2813776A
Other languages
Japanese (ja)
Other versions
JPS5328388B2 (en
Inventor
Yasushi Tamai
Masamichi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP2813776A priority Critical patent/JPS52111473A/en
Publication of JPS52111473A publication Critical patent/JPS52111473A/en
Publication of JPS5328388B2 publication Critical patent/JPS5328388B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To make the temperature of growth interface lower part uniform and to improve the uniformity of thickness by letting flow comparatively high temperature liquid stream in the heighborhood of growth interface lower part and making a high temperature zone at this part.
COPYRIGHT: (C)1977,JPO&Japio
JP2813776A 1976-03-17 1976-03-17 Ribbon crystal growth method Granted JPS52111473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2813776A JPS52111473A (en) 1976-03-17 1976-03-17 Ribbon crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2813776A JPS52111473A (en) 1976-03-17 1976-03-17 Ribbon crystal growth method

Publications (2)

Publication Number Publication Date
JPS52111473A true JPS52111473A (en) 1977-09-19
JPS5328388B2 JPS5328388B2 (en) 1978-08-14

Family

ID=12240371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2813776A Granted JPS52111473A (en) 1976-03-17 1976-03-17 Ribbon crystal growth method

Country Status (1)

Country Link
JP (1) JPS52111473A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229926Y2 (en) * 1980-07-17 1987-08-01
JPS6356409U (en) * 1986-09-30 1988-04-15

Also Published As

Publication number Publication date
JPS5328388B2 (en) 1978-08-14

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