JPS549174A - Method of producing seingle crystal - Google Patents

Method of producing seingle crystal

Info

Publication number
JPS549174A
JPS549174A JP7440777A JP7440777A JPS549174A JP S549174 A JPS549174 A JP S549174A JP 7440777 A JP7440777 A JP 7440777A JP 7440777 A JP7440777 A JP 7440777A JP S549174 A JPS549174 A JP S549174A
Authority
JP
Japan
Prior art keywords
crystal
seingle
producing
heating
lowring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7440777A
Other languages
Japanese (ja)
Other versions
JPS5825078B2 (en
Inventor
Tsuguo Fukuda
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7440777A priority Critical patent/JPS5825078B2/en
Publication of JPS549174A publication Critical patent/JPS549174A/en
Publication of JPS5825078B2 publication Critical patent/JPS5825078B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To allow most of fused matter in a crucible to grow into a high quality single crystal by lowring the effective heating position of a heating device such as high frequency heating relative to a drop in the liquid level thereof.
COPYRIGHT: (C)1979,JPO&Japio
JP7440777A 1977-06-24 1977-06-24 Single crystal manufacturing method Expired JPS5825078B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7440777A JPS5825078B2 (en) 1977-06-24 1977-06-24 Single crystal manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7440777A JPS5825078B2 (en) 1977-06-24 1977-06-24 Single crystal manufacturing method

Publications (2)

Publication Number Publication Date
JPS549174A true JPS549174A (en) 1979-01-23
JPS5825078B2 JPS5825078B2 (en) 1983-05-25

Family

ID=13546295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7440777A Expired JPS5825078B2 (en) 1977-06-24 1977-06-24 Single crystal manufacturing method

Country Status (1)

Country Link
JP (1) JPS5825078B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157318A (en) * 1974-06-05 1975-12-19
JPS50157319A (en) * 1974-06-05 1975-12-19
JPS57183394A (en) * 1981-05-06 1982-11-11 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for pulling single crystal
US4439265A (en) * 1981-07-17 1984-03-27 Bell Telephone Laboratories, Incorporated Fabrication method for LiNbO3 and LiTaO3 integrated optics devices
JPS59203792A (en) * 1983-04-30 1984-11-17 Fujitsu Ltd Process for growing single crystal
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4776917A (en) * 1984-12-24 1988-10-11 Shin-Etsu Chemical Co., Ltd. Single crystal wafer of lithium tantalate
CN108456927A (en) * 2018-04-24 2018-08-28 安徽晶宸科技有限公司 A kind of large scale LiTaO3The Automatic Control growing method of crystal
CN111206282A (en) * 2019-10-30 2020-05-29 德清晶辉光电科技股份有限公司 Production method of 8-inch lithium niobate crystal

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157319A (en) * 1974-06-05 1975-12-19
JPS5715756B2 (en) * 1974-06-05 1982-04-01
JPS5720947B2 (en) * 1974-06-05 1982-05-04
JPS50157318A (en) * 1974-06-05 1975-12-19
JPS621356B2 (en) * 1981-05-06 1987-01-13 Nippon Denshin Denwa Kk
JPS57183394A (en) * 1981-05-06 1982-11-11 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for pulling single crystal
US4439265A (en) * 1981-07-17 1984-03-27 Bell Telephone Laboratories, Incorporated Fabrication method for LiNbO3 and LiTaO3 integrated optics devices
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
JPS59203792A (en) * 1983-04-30 1984-11-17 Fujitsu Ltd Process for growing single crystal
US4776917A (en) * 1984-12-24 1988-10-11 Shin-Etsu Chemical Co., Ltd. Single crystal wafer of lithium tantalate
US4898641A (en) * 1984-12-24 1990-02-06 Shin-Etsu Chemical Co., Ltd. Single crystal wafer of lithium tantalate
CN108456927A (en) * 2018-04-24 2018-08-28 安徽晶宸科技有限公司 A kind of large scale LiTaO3The Automatic Control growing method of crystal
CN111206282A (en) * 2019-10-30 2020-05-29 德清晶辉光电科技股份有限公司 Production method of 8-inch lithium niobate crystal

Also Published As

Publication number Publication date
JPS5825078B2 (en) 1983-05-25

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