JPS5373480A - Hot zone for sheet crystal making apparatus - Google Patents

Hot zone for sheet crystal making apparatus

Info

Publication number
JPS5373480A
JPS5373480A JP14961776A JP14961776A JPS5373480A JP S5373480 A JPS5373480 A JP S5373480A JP 14961776 A JP14961776 A JP 14961776A JP 14961776 A JP14961776 A JP 14961776A JP S5373480 A JPS5373480 A JP S5373480A
Authority
JP
Japan
Prior art keywords
hot zone
making apparatus
sheet crystal
crystal making
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14961776A
Other languages
Japanese (ja)
Other versions
JPS5340593B2 (en
Inventor
Keigo Hoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14961776A priority Critical patent/JPS5373480A/en
Publication of JPS5373480A publication Critical patent/JPS5373480A/en
Publication of JPS5340593B2 publication Critical patent/JPS5340593B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make it possible to grow many stable large sheet crystals simultaneously by installing one or more pairs of reflecting board to hot zone section so as to control temp. distribution efficiently.
COPYRIGHT: (C)1978,JPO&Japio
JP14961776A 1976-12-13 1976-12-13 Hot zone for sheet crystal making apparatus Granted JPS5373480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14961776A JPS5373480A (en) 1976-12-13 1976-12-13 Hot zone for sheet crystal making apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14961776A JPS5373480A (en) 1976-12-13 1976-12-13 Hot zone for sheet crystal making apparatus

Publications (2)

Publication Number Publication Date
JPS5373480A true JPS5373480A (en) 1978-06-29
JPS5340593B2 JPS5340593B2 (en) 1978-10-27

Family

ID=15479117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14961776A Granted JPS5373480A (en) 1976-12-13 1976-12-13 Hot zone for sheet crystal making apparatus

Country Status (1)

Country Link
JP (1) JPS5373480A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560630A (en) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof
CN103160915A (en) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 Drawing die plate for C-shaped silicon core
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230497A (en) * 1988-07-16 1990-01-31 Nagao Kogyo:Kk Recovery device for chip in shear piercing
JP7147213B2 (en) 2018-03-23 2022-10-05 Tdk株式会社 Single crystal growth die by EFG method, single crystal growth method by EFG method and single crystal by EFG method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160915A (en) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 Drawing die plate for C-shaped silicon core
CN102560630A (en) * 2012-01-12 2012-07-11 徐州协鑫光电科技有限公司 Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof
JP5923700B1 (en) * 2015-11-30 2016-05-25 並木精密宝石株式会社 Large EFG method growth furnace lid structure

Also Published As

Publication number Publication date
JPS5340593B2 (en) 1978-10-27

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