JPS5340593B2 - - Google Patents
Info
- Publication number
- JPS5340593B2 JPS5340593B2 JP14961776A JP14961776A JPS5340593B2 JP S5340593 B2 JPS5340593 B2 JP S5340593B2 JP 14961776 A JP14961776 A JP 14961776A JP 14961776 A JP14961776 A JP 14961776A JP S5340593 B2 JPS5340593 B2 JP S5340593B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961776A JPS5373480A (en) | 1976-12-13 | 1976-12-13 | Hot zone for sheet crystal making apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14961776A JPS5373480A (en) | 1976-12-13 | 1976-12-13 | Hot zone for sheet crystal making apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5373480A JPS5373480A (en) | 1978-06-29 |
| JPS5340593B2 true JPS5340593B2 (en) | 1978-10-27 |
Family
ID=15479117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14961776A Granted JPS5373480A (en) | 1976-12-13 | 1976-12-13 | Hot zone for sheet crystal making apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5373480A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230497A (en) * | 1988-07-16 | 1990-01-31 | Nagao Kogyo:Kk | Recovery device for chip in shear piercing |
| US11492724B2 (en) | 2018-03-23 | 2022-11-08 | Tdk Corporation | Die for EFG-based single crystal growth, EFG-based single crystal growth method, and EFG single crystal |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160915A (en) * | 2011-12-09 | 2013-06-19 | 洛阳金诺机械工程有限公司 | Drawing die plate for C-shaped silicon core |
| CN102560630A (en) * | 2012-01-12 | 2012-07-11 | 徐州协鑫光电科技有限公司 | Thermal field capable of allowing synchronous growth of a plurality of crystals with edge-defined film-fed crystal growth technique and method thereof |
| JP5923700B1 (en) * | 2015-11-30 | 2016-05-25 | 並木精密宝石株式会社 | Large EFG method growth furnace lid structure |
-
1976
- 1976-12-13 JP JP14961776A patent/JPS5373480A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0230497A (en) * | 1988-07-16 | 1990-01-31 | Nagao Kogyo:Kk | Recovery device for chip in shear piercing |
| US11492724B2 (en) | 2018-03-23 | 2022-11-08 | Tdk Corporation | Die for EFG-based single crystal growth, EFG-based single crystal growth method, and EFG single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5373480A (en) | 1978-06-29 |