JPS53128979A - Growing method for semiconductor crystal - Google Patents

Growing method for semiconductor crystal

Info

Publication number
JPS53128979A
JPS53128979A JP4349377A JP4349377A JPS53128979A JP S53128979 A JPS53128979 A JP S53128979A JP 4349377 A JP4349377 A JP 4349377A JP 4349377 A JP4349377 A JP 4349377A JP S53128979 A JPS53128979 A JP S53128979A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
growing method
lowering
secure
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4349377A
Other languages
Japanese (ja)
Inventor
Akira Sanyou
Akihiro Shibatomi
Tsutomu Kiyono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4349377A priority Critical patent/JPS53128979A/en
Publication of JPS53128979A publication Critical patent/JPS53128979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To secure a quick cooling of the crystal substrate without lowering the temperature of the reaction tube.
COPYRIGHT: (C)1978,JPO&Japio
JP4349377A 1977-04-18 1977-04-18 Growing method for semiconductor crystal Pending JPS53128979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4349377A JPS53128979A (en) 1977-04-18 1977-04-18 Growing method for semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4349377A JPS53128979A (en) 1977-04-18 1977-04-18 Growing method for semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS53128979A true JPS53128979A (en) 1978-11-10

Family

ID=12665229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4349377A Pending JPS53128979A (en) 1977-04-18 1977-04-18 Growing method for semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS53128979A (en)

Similar Documents

Publication Publication Date Title
JPS5421172A (en) Manufacture for semiconductor device
JPS53128979A (en) Growing method for semiconductor crystal
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS538374A (en) Growing method for single crystal of semiconductor
JPS5423472A (en) Manufacture for semiconductor device
JPS5383588A (en) Manufacture of substrate for semiconductor light emitting device
JPS547861A (en) Liquid phase epitaxial growth method
JPS51137165A (en) Heat transmitting fins
JPS542670A (en) Plasma etching method
JPS5326663A (en) Manu facture of semiconductor device
JPS53104161A (en) Crystal growth method
JPS52141565A (en) Manufacture of semiconductor unit
JPS5211782A (en) Method of manufacturing semiconductor device
JPS52121951A (en) Apparatus for cooling greenhouse
JPS53134360A (en) Vapor phase growing method for compound semiconductor
JPS5421171A (en) Manufacture for compound semiconductor device
JPS5434757A (en) Chemical vapor-phase growth method
JPS5267571A (en) Crystallization method for semiconductor
JPS53144474A (en) Apparatus for producing crystal semiconductor
JPS5436192A (en) Manufacture for semiconductor
JPS5293272A (en) Manufacture for semiconductor
JPS5421181A (en) Manufacture for semiconductor device
JPS528769A (en) Semiconductor device
JPS5425159A (en) Thermal processing method for semiconductor
JPS53115178A (en) Production of semiconductor device