JPS5796534A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS5796534A
JPS5796534A JP17292780A JP17292780A JPS5796534A JP S5796534 A JPS5796534 A JP S5796534A JP 17292780 A JP17292780 A JP 17292780A JP 17292780 A JP17292780 A JP 17292780A JP S5796534 A JPS5796534 A JP S5796534A
Authority
JP
Japan
Prior art keywords
gas
reaction chamber
chemical vapor
wafer
vapor growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17292780A
Other languages
Japanese (ja)
Inventor
Yasuhide Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17292780A priority Critical patent/JPS5796534A/en
Publication of JPS5796534A publication Critical patent/JPS5796534A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To make it possible to effect annealing without taking out a wafer from a chemical vapor deposition (CVD) device, by providing the CVD device with a pre-heated gas introduction pipe and introducing pre-heated gas into CVD device after formation of chemical vapor growth film on the water. CONSTITUTION:A silicon wafer G is set within a reaction chamber D using a supporter H. Then, the pressure in the reaction chamber D is reduced, and a vapor growth is performed by introducing raw gas into the reaction chamber D through K. In succession, contents of the reaction chamber D is substituted by inactive gas. The inactive gas is introduced into the reaction chamber after preheating previously said gas with a gas preheater B. Lastly, the silicon wafer G is taken out. The chemical vapor growth film is annealed automatically by the preheated inactive gas, so no annealing after the wafer was taken out is required.
JP17292780A 1980-12-08 1980-12-08 Cvd device Pending JPS5796534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17292780A JPS5796534A (en) 1980-12-08 1980-12-08 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17292780A JPS5796534A (en) 1980-12-08 1980-12-08 Cvd device

Publications (1)

Publication Number Publication Date
JPS5796534A true JPS5796534A (en) 1982-06-15

Family

ID=15950925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17292780A Pending JPS5796534A (en) 1980-12-08 1980-12-08 Cvd device

Country Status (1)

Country Link
JP (1) JPS5796534A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469923A (en) * 1990-07-11 1992-03-05 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk Semiconductor manufacturing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469923A (en) * 1990-07-11 1992-03-05 Shiyoudenriyoku Kosoku Tsushin Kenkyusho:Kk Semiconductor manufacturing equipment

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