JPS6459808A - Growth of semiconductor - Google Patents
Growth of semiconductorInfo
- Publication number
- JPS6459808A JPS6459808A JP21501987A JP21501987A JPS6459808A JP S6459808 A JPS6459808 A JP S6459808A JP 21501987 A JP21501987 A JP 21501987A JP 21501987 A JP21501987 A JP 21501987A JP S6459808 A JPS6459808 A JP S6459808A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- hydrogen
- silicon film
- growth operation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a uniform silicon film on a large-diameter substrate by a method wherein, when the silicon film is grown by a CVD method, a mixed gas of hydrogen gas and a nonreactive gas is used as a carrier gas. CONSTITUTION:An apparatus is constituted by the following: a reaction tube 1 used for a growth operation; a susceptor 2 to hold a substrate 8; a heater 3 to heat the substrate 8; bombs 4a, 4b, 4c; a gas mixer 5; flow-rate control parts 6; individual gas purification devices 7a, 7b. Hundred % SiH2Cl2 gas is used as a raw gas; argon and hydrogen are used as carrier gases; the substrate is baked; after that, the growth operation is executed; a uniform film can be obtained on the whole surface of the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501987A JPS6459808A (en) | 1987-08-31 | 1987-08-31 | Growth of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501987A JPS6459808A (en) | 1987-08-31 | 1987-08-31 | Growth of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459808A true JPS6459808A (en) | 1989-03-07 |
Family
ID=16665384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21501987A Pending JPS6459808A (en) | 1987-08-31 | 1987-08-31 | Growth of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459808A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0421608A2 (en) * | 1989-09-05 | 1991-04-10 | Fujitsu Limited | Method of forming a vertical type superlattice layer of compound semiconductor |
US11547114B2 (en) | 2017-06-05 | 2023-01-10 | Verdesian Life Sciences U.S., Llc | Combination of pyroglutamic acid and a strobilurin fungicide for improved plant health effects |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4966067A (en) * | 1972-10-30 | 1974-06-26 | ||
JPS62180074A (en) * | 1986-02-03 | 1987-08-07 | Canon Inc | Formation of deposited film by plasma cvd method |
-
1987
- 1987-08-31 JP JP21501987A patent/JPS6459808A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4966067A (en) * | 1972-10-30 | 1974-06-26 | ||
JPS62180074A (en) * | 1986-02-03 | 1987-08-07 | Canon Inc | Formation of deposited film by plasma cvd method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0421608A2 (en) * | 1989-09-05 | 1991-04-10 | Fujitsu Limited | Method of forming a vertical type superlattice layer of compound semiconductor |
EP0421608A3 (en) * | 1989-09-05 | 1991-07-10 | Fujitsu Limited | Method of forming a vertical type superlattice layer of compound semiconductor |
US11547114B2 (en) | 2017-06-05 | 2023-01-10 | Verdesian Life Sciences U.S., Llc | Combination of pyroglutamic acid and a strobilurin fungicide for improved plant health effects |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0164928A3 (en) | Vertical hot wall cvd reactor | |
JPS57158370A (en) | Formation of metallic thin film | |
JPS5529155A (en) | Semiconductor device | |
GB1260233A (en) | Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase | |
JPS6459808A (en) | Growth of semiconductor | |
JPS56160400A (en) | Growing method for gallium nitride | |
JPS5434676A (en) | Vapor growth method and apparatus for high-purity semiconductor layer | |
JPS57152132A (en) | Chemical vapor growing method | |
GB1128556A (en) | Improvements in or relating to the manufacture of high-purity crystalline materials | |
JPS5542231A (en) | Reduced pressure vapor phase growing device | |
JPS6441212A (en) | Semiconductor crystal growth method | |
JPS5493357A (en) | Growing method of polycrystal silicon | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS6446917A (en) | Chemical vapor growth device | |
JPS5553415A (en) | Selective epitaxial growing | |
JPS6414926A (en) | Manufacture of semiconductor device | |
JPS5748227A (en) | Manufacture of semiconductor device | |
SE9500327D0 (en) | Device for epitaxially growing SiC by CVD | |
JPS57157530A (en) | Forming method for insulator thin-film | |
JPS561525A (en) | Epitaxial growing method of silicon crystal | |
JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
JPS5626800A (en) | Vapor phase epitaxial growing method | |
JPS5710921A (en) | Gas phase epitaxial growth device | |
JPS6428374A (en) | Method for selectively growing tungsten | |
JPS6373618A (en) | Semiconductor crystal growth apparatus |