JPS6459808A - Growth of semiconductor - Google Patents

Growth of semiconductor

Info

Publication number
JPS6459808A
JPS6459808A JP21501987A JP21501987A JPS6459808A JP S6459808 A JPS6459808 A JP S6459808A JP 21501987 A JP21501987 A JP 21501987A JP 21501987 A JP21501987 A JP 21501987A JP S6459808 A JPS6459808 A JP S6459808A
Authority
JP
Japan
Prior art keywords
gas
substrate
hydrogen
silicon film
growth operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21501987A
Other languages
Japanese (ja)
Inventor
Yoshio Oshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21501987A priority Critical patent/JPS6459808A/en
Publication of JPS6459808A publication Critical patent/JPS6459808A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a uniform silicon film on a large-diameter substrate by a method wherein, when the silicon film is grown by a CVD method, a mixed gas of hydrogen gas and a nonreactive gas is used as a carrier gas. CONSTITUTION:An apparatus is constituted by the following: a reaction tube 1 used for a growth operation; a susceptor 2 to hold a substrate 8; a heater 3 to heat the substrate 8; bombs 4a, 4b, 4c; a gas mixer 5; flow-rate control parts 6; individual gas purification devices 7a, 7b. Hundred % SiH2Cl2 gas is used as a raw gas; argon and hydrogen are used as carrier gases; the substrate is baked; after that, the growth operation is executed; a uniform film can be obtained on the whole surface of the substrate.
JP21501987A 1987-08-31 1987-08-31 Growth of semiconductor Pending JPS6459808A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21501987A JPS6459808A (en) 1987-08-31 1987-08-31 Growth of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21501987A JPS6459808A (en) 1987-08-31 1987-08-31 Growth of semiconductor

Publications (1)

Publication Number Publication Date
JPS6459808A true JPS6459808A (en) 1989-03-07

Family

ID=16665384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21501987A Pending JPS6459808A (en) 1987-08-31 1987-08-31 Growth of semiconductor

Country Status (1)

Country Link
JP (1) JPS6459808A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421608A2 (en) * 1989-09-05 1991-04-10 Fujitsu Limited Method of forming a vertical type superlattice layer of compound semiconductor
US11547114B2 (en) 2017-06-05 2023-01-10 Verdesian Life Sciences U.S., Llc Combination of pyroglutamic acid and a strobilurin fungicide for improved plant health effects

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966067A (en) * 1972-10-30 1974-06-26
JPS62180074A (en) * 1986-02-03 1987-08-07 Canon Inc Formation of deposited film by plasma cvd method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966067A (en) * 1972-10-30 1974-06-26
JPS62180074A (en) * 1986-02-03 1987-08-07 Canon Inc Formation of deposited film by plasma cvd method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0421608A2 (en) * 1989-09-05 1991-04-10 Fujitsu Limited Method of forming a vertical type superlattice layer of compound semiconductor
EP0421608A3 (en) * 1989-09-05 1991-07-10 Fujitsu Limited Method of forming a vertical type superlattice layer of compound semiconductor
US11547114B2 (en) 2017-06-05 2023-01-10 Verdesian Life Sciences U.S., Llc Combination of pyroglutamic acid and a strobilurin fungicide for improved plant health effects

Similar Documents

Publication Publication Date Title
EP0164928A3 (en) Vertical hot wall cvd reactor
JPS57158370A (en) Formation of metallic thin film
JPS5529155A (en) Semiconductor device
GB1260233A (en) Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase
JPS6459808A (en) Growth of semiconductor
JPS56160400A (en) Growing method for gallium nitride
JPS5434676A (en) Vapor growth method and apparatus for high-purity semiconductor layer
JPS57152132A (en) Chemical vapor growing method
GB1128556A (en) Improvements in or relating to the manufacture of high-purity crystalline materials
JPS5542231A (en) Reduced pressure vapor phase growing device
JPS6441212A (en) Semiconductor crystal growth method
JPS5493357A (en) Growing method of polycrystal silicon
JPS54106081A (en) Growth method in vapor phase
JPS6446917A (en) Chemical vapor growth device
JPS5553415A (en) Selective epitaxial growing
JPS6414926A (en) Manufacture of semiconductor device
JPS5748227A (en) Manufacture of semiconductor device
SE9500327D0 (en) Device for epitaxially growing SiC by CVD
JPS57157530A (en) Forming method for insulator thin-film
JPS561525A (en) Epitaxial growing method of silicon crystal
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5626800A (en) Vapor phase epitaxial growing method
JPS5710921A (en) Gas phase epitaxial growth device
JPS6428374A (en) Method for selectively growing tungsten
JPS6373618A (en) Semiconductor crystal growth apparatus