JPS5748227A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5748227A
JPS5748227A JP12417680A JP12417680A JPS5748227A JP S5748227 A JPS5748227 A JP S5748227A JP 12417680 A JP12417680 A JP 12417680A JP 12417680 A JP12417680 A JP 12417680A JP S5748227 A JPS5748227 A JP S5748227A
Authority
JP
Japan
Prior art keywords
substrate
temperature
processed substrate
facing
source substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12417680A
Other languages
Japanese (ja)
Other versions
JPS636138B2 (en
Inventor
Fumio Yanagihara
Yukio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12417680A priority Critical patent/JPS5748227A/en
Publication of JPS5748227A publication Critical patent/JPS5748227A/en
Publication of JPS636138B2 publication Critical patent/JPS636138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes

Abstract

PURPOSE:To make etching and growth at the same time, by a method wherein an Si processed substrate is placed near an Si source substrate facing to each other in an Si reaction space and the temperature of the source substrate, the temperature of the side of the processed substrate facing the source substrate and the temperature of the backside of the processed substrate are maintained and controlled in a prearranged relation. CONSTITUTION:An Si source substrate 22 is mounted on a susceptor 24 which is contained in a reaction tube 25 and an Si processed substrate 21 is provided over the Si source substrate 22 holding a small piece of crystall between them. The temperature of the source substrate 22 on the side facing the processed substrate 21 is designated as T1, the temperature of the processed substrate 21 on the side facing the source substrate 22 is designated as T2 and the temperature of the processed substrate 21 on the backside is designated as T3(T1>T2>T3). After the whole composition is heated so that T3 becomes 1,085 deg.C, HCl gas is introduced into the reaction tube 25 so that the backside of the processed substrate 21 is etched and between facing sides of the two substratates 21, 22 polycrystal Si is grown on the side of the processed substrate 21 facing the source substrate 22 by utilizing a mass-transfer reaction. With the above method the growth and the etching can be performed at the same time so that man-hour needed for the process is reduced and the damage of the Si substrate is eliminated.
JP12417680A 1980-09-08 1980-09-08 Manufacture of semiconductor device Granted JPS5748227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12417680A JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12417680A JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5748227A true JPS5748227A (en) 1982-03-19
JPS636138B2 JPS636138B2 (en) 1988-02-08

Family

ID=14878845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12417680A Granted JPS5748227A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5748227A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830987A (en) * 1987-11-19 1989-05-16 Texas Instruments Incorporated Contactless annealing process using cover slices
WO2000028116A1 (en) * 1998-11-10 2000-05-18 Bayerisches Zentrum für angewandte Energieforschung e.V. (ZAE Bayern) Growth method for a crystalline structure
US7722427B2 (en) 2005-02-04 2010-05-25 Hajime Corporation Moving toy utilizing magnetic force

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140966A (en) * 1962-05-29 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
JPS48104466A (en) * 1972-04-14 1973-12-27

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140965A (en) * 1961-07-22 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
US3140966A (en) * 1962-05-29 1964-07-14 Siemens Ag Vapor deposition onto stacked semiconductor wafers followed by particular cooling
JPS48104466A (en) * 1972-04-14 1973-12-27

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830987A (en) * 1987-11-19 1989-05-16 Texas Instruments Incorporated Contactless annealing process using cover slices
WO2000028116A1 (en) * 1998-11-10 2000-05-18 Bayerisches Zentrum für angewandte Energieforschung e.V. (ZAE Bayern) Growth method for a crystalline structure
US7722427B2 (en) 2005-02-04 2010-05-25 Hajime Corporation Moving toy utilizing magnetic force

Also Published As

Publication number Publication date
JPS636138B2 (en) 1988-02-08

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