JPS5648127A - Epitaxial growth - Google Patents

Epitaxial growth

Info

Publication number
JPS5648127A
JPS5648127A JP12364779A JP12364779A JPS5648127A JP S5648127 A JPS5648127 A JP S5648127A JP 12364779 A JP12364779 A JP 12364779A JP 12364779 A JP12364779 A JP 12364779A JP S5648127 A JPS5648127 A JP S5648127A
Authority
JP
Japan
Prior art keywords
epitaxial growth
substrate
reactor
pressure
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12364779A
Other languages
Japanese (ja)
Other versions
JPS5724020B2 (en
Inventor
Mikio Takagi
Mamoru Maeda
Yoshio Akai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12364779A priority Critical patent/JPS5648127A/en
Publication of JPS5648127A publication Critical patent/JPS5648127A/en
Publication of JPS5724020B2 publication Critical patent/JPS5724020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To eliminate roughness on the surface of a semiconductor by keeping a semiconductor substrate from being exposed to a high temperature/low pressure condition during the periods other than those of epitaxial growth on a silicon substrate in a pressure reducing epitaxial growth. CONSTITUTION:An inert gas such as N2 flows into a reactor and a semiconductor Si substrate to be treated is placed thereinto. Then, after the gas is suspended, a carrier gas such As H2 flows into the reactor with the pressure there in lowering to 200-700 Torr. Then, the temperature in the reactor is raised up to 1,100 deg.C, for example, and the pressure therein reduced to 100 Torr. A reaction gas such as SiH2 flows into the reactor to start an epitaxial growth. After the end of the specified epitaxial growth, the reaction gas is stopped and the pressure therein is raised to 200-700 Torr with an adjustment of a carrier gas with a lower temperature therein. This keeps the Si substrate from being exposed to a high temperature/low pressure condition during the periods other than those of epitaxial growth thereon eliminating roughness on the surface of the Si substrate.
JP12364779A 1979-09-26 1979-09-26 Epitaxial growth Granted JPS5648127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12364779A JPS5648127A (en) 1979-09-26 1979-09-26 Epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12364779A JPS5648127A (en) 1979-09-26 1979-09-26 Epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5648127A true JPS5648127A (en) 1981-05-01
JPS5724020B2 JPS5724020B2 (en) 1982-05-21

Family

ID=14865765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12364779A Granted JPS5648127A (en) 1979-09-26 1979-09-26 Epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5648127A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509471A (en) * 1973-05-21 1975-01-30
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509471A (en) * 1973-05-21 1975-01-30
JPS5319181A (en) * 1976-08-06 1978-02-22 Hitachi Ltd Low pressure reaction apparatus

Also Published As

Publication number Publication date
JPS5724020B2 (en) 1982-05-21

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