JPS55120129A - Method for gaseous-phase growth of semiconductor - Google Patents

Method for gaseous-phase growth of semiconductor

Info

Publication number
JPS55120129A
JPS55120129A JP2672179A JP2672179A JPS55120129A JP S55120129 A JPS55120129 A JP S55120129A JP 2672179 A JP2672179 A JP 2672179A JP 2672179 A JP2672179 A JP 2672179A JP S55120129 A JPS55120129 A JP S55120129A
Authority
JP
Japan
Prior art keywords
carrier
temperature
gaas
gas
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2672179A
Other languages
Japanese (ja)
Inventor
Kazuto Ogasawara
Tsutomu Kiyono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2672179A priority Critical patent/JPS55120129A/en
Publication of JPS55120129A publication Critical patent/JPS55120129A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain a high-connectration III-V-group-compound epitaxial layer by supplying a specified amount of S at or above 720 deg.C, and changing the carrier from H2+N2 or a mixed system of inactive gas to N2 or an inactive-gas system. CONSTITUTION:A GaAs substrate 12 is kept at or above 720 deg.C, and N2 and H2 are supplied 15, 16 separately or in a mixed state. A specified amount of S 13, which is heated to a specified temperature of 90 deg.C or less, and AsCl3 gas 14 are supplied 18 and 19 by carrier gas. In the case of an N2 system carrier, the growing speed of GaAs decreases in inverse proportion to the temperature, and the impurity concentration which is accepted into GaAs from the reactive system becomes relatively high. In the case of an H2-system carrier, the carrier concentration does not increase remarkably even though the growing temperature is raised. In the N2 system, the non-added carrier level 1 is lower than that of the H2 system at or below 700 deg.C, but is reversed above 700 deg.C. Then, with relationship betweem the carrier concentration and the growing temperature being considered, epitaxial growth is performed within the temperature range above 720 deg.C in which the growing speed of GaAs is low, thereby high concentration can be obtained.
JP2672179A 1979-03-09 1979-03-09 Method for gaseous-phase growth of semiconductor Pending JPS55120129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2672179A JPS55120129A (en) 1979-03-09 1979-03-09 Method for gaseous-phase growth of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2672179A JPS55120129A (en) 1979-03-09 1979-03-09 Method for gaseous-phase growth of semiconductor

Publications (1)

Publication Number Publication Date
JPS55120129A true JPS55120129A (en) 1980-09-16

Family

ID=12201193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2672179A Pending JPS55120129A (en) 1979-03-09 1979-03-09 Method for gaseous-phase growth of semiconductor

Country Status (1)

Country Link
JP (1) JPS55120129A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326623A (en) * 1994-09-09 1995-12-12 Res Dev Corp Of Japan Manufacture of gaas semiconductor diode
WO2000034990A1 (en) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Production of multilayer semiconductor structures by changing the carrier gas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07326623A (en) * 1994-09-09 1995-12-12 Res Dev Corp Of Japan Manufacture of gaas semiconductor diode
WO2000034990A1 (en) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Production of multilayer semiconductor structures by changing the carrier gas

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