JPS56133819A - Manufacture of epitaxial wafer for field effect transistor - Google Patents
Manufacture of epitaxial wafer for field effect transistorInfo
- Publication number
- JPS56133819A JPS56133819A JP3690880A JP3690880A JPS56133819A JP S56133819 A JPS56133819 A JP S56133819A JP 3690880 A JP3690880 A JP 3690880A JP 3690880 A JP3690880 A JP 3690880A JP S56133819 A JPS56133819 A JP S56133819A
- Authority
- JP
- Japan
- Prior art keywords
- reaction container
- epitaxial wafer
- ash3
- organic
- induced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
PURPOSE:To obtain an epitaxial wafer for an FET with good uniformity and good reproducibility by arranging a semi-insulating GaAs substrate in a reaction container wherein organic Ga and AsH3 of composition ratio of near p-n inversion carrier concentration induced in the reaction container are pyrolyzed in an S atmosphere. CONSTITUTION:A semi-insulating GaAs substrate doped Cr or the like is arranged in a reaction container and organic Ga [for example, (CH3)3Ga] and AsH3 of composition ratio of near p-n junction carrier concentration are induced in the reaction container by consisting H2 as carrier gas as shown in a diagram and the organic Ga and AsH3 are pyrolyzed in an atmosphere induced S consisting H2S or H2 as carrier gas with a low concentration and a high-resistivity layer with an electron concentration of 10<13>cm<-3> or less is epitaxially grown on the substrate. In this way, an epitaxial wafer for an FET having a high uniformity and good interface between the growth layer and the substrate will be obtained with good reproducibility by a pyrolysis method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3690880A JPS56133819A (en) | 1980-03-25 | 1980-03-25 | Manufacture of epitaxial wafer for field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3690880A JPS56133819A (en) | 1980-03-25 | 1980-03-25 | Manufacture of epitaxial wafer for field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56133819A true JPS56133819A (en) | 1981-10-20 |
Family
ID=12482869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3690880A Pending JPS56133819A (en) | 1980-03-25 | 1980-03-25 | Manufacture of epitaxial wafer for field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56133819A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254424A (en) * | 1985-05-16 | 1987-03-10 | Furukawa Electric Co Ltd:The | Vapor growing process of gaas thin film |
JPS63143810A (en) * | 1986-12-08 | 1988-06-16 | Matsushita Electric Ind Co Ltd | Vapor growth of compound semiconductor |
-
1980
- 1980-03-25 JP JP3690880A patent/JPS56133819A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254424A (en) * | 1985-05-16 | 1987-03-10 | Furukawa Electric Co Ltd:The | Vapor growing process of gaas thin film |
JPH0754802B2 (en) * | 1985-05-16 | 1995-06-07 | 古河電気工業株式会社 | Vapor growth method of GaAs thin film |
JPS63143810A (en) * | 1986-12-08 | 1988-06-16 | Matsushita Electric Ind Co Ltd | Vapor growth of compound semiconductor |
JPH0754805B2 (en) * | 1986-12-08 | 1995-06-07 | 松下電器産業株式会社 | Vapor growth method of compound semiconductor |
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