JPS56133819A - Manufacture of epitaxial wafer for field effect transistor - Google Patents

Manufacture of epitaxial wafer for field effect transistor

Info

Publication number
JPS56133819A
JPS56133819A JP3690880A JP3690880A JPS56133819A JP S56133819 A JPS56133819 A JP S56133819A JP 3690880 A JP3690880 A JP 3690880A JP 3690880 A JP3690880 A JP 3690880A JP S56133819 A JPS56133819 A JP S56133819A
Authority
JP
Japan
Prior art keywords
reaction container
epitaxial wafer
ash3
organic
induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3690880A
Other languages
Japanese (ja)
Inventor
Tokuji Tanaka
Takashi Udagawa
Takatoshi Nakanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3690880A priority Critical patent/JPS56133819A/en
Publication of JPS56133819A publication Critical patent/JPS56133819A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain an epitaxial wafer for an FET with good uniformity and good reproducibility by arranging a semi-insulating GaAs substrate in a reaction container wherein organic Ga and AsH3 of composition ratio of near p-n inversion carrier concentration induced in the reaction container are pyrolyzed in an S atmosphere. CONSTITUTION:A semi-insulating GaAs substrate doped Cr or the like is arranged in a reaction container and organic Ga [for example, (CH3)3Ga] and AsH3 of composition ratio of near p-n junction carrier concentration are induced in the reaction container by consisting H2 as carrier gas as shown in a diagram and the organic Ga and AsH3 are pyrolyzed in an atmosphere induced S consisting H2S or H2 as carrier gas with a low concentration and a high-resistivity layer with an electron concentration of 10<13>cm<-3> or less is epitaxially grown on the substrate. In this way, an epitaxial wafer for an FET having a high uniformity and good interface between the growth layer and the substrate will be obtained with good reproducibility by a pyrolysis method.
JP3690880A 1980-03-25 1980-03-25 Manufacture of epitaxial wafer for field effect transistor Pending JPS56133819A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3690880A JPS56133819A (en) 1980-03-25 1980-03-25 Manufacture of epitaxial wafer for field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3690880A JPS56133819A (en) 1980-03-25 1980-03-25 Manufacture of epitaxial wafer for field effect transistor

Publications (1)

Publication Number Publication Date
JPS56133819A true JPS56133819A (en) 1981-10-20

Family

ID=12482869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3690880A Pending JPS56133819A (en) 1980-03-25 1980-03-25 Manufacture of epitaxial wafer for field effect transistor

Country Status (1)

Country Link
JP (1) JPS56133819A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254424A (en) * 1985-05-16 1987-03-10 Furukawa Electric Co Ltd:The Vapor growing process of gaas thin film
JPS63143810A (en) * 1986-12-08 1988-06-16 Matsushita Electric Ind Co Ltd Vapor growth of compound semiconductor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254424A (en) * 1985-05-16 1987-03-10 Furukawa Electric Co Ltd:The Vapor growing process of gaas thin film
JPH0754802B2 (en) * 1985-05-16 1995-06-07 古河電気工業株式会社 Vapor growth method of GaAs thin film
JPS63143810A (en) * 1986-12-08 1988-06-16 Matsushita Electric Ind Co Ltd Vapor growth of compound semiconductor
JPH0754805B2 (en) * 1986-12-08 1995-06-07 松下電器産業株式会社 Vapor growth method of compound semiconductor

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