JPS5670676A - Luminous diode - Google Patents

Luminous diode

Info

Publication number
JPS5670676A
JPS5670676A JP14814479A JP14814479A JPS5670676A JP S5670676 A JPS5670676 A JP S5670676A JP 14814479 A JP14814479 A JP 14814479A JP 14814479 A JP14814479 A JP 14814479A JP S5670676 A JPS5670676 A JP S5670676A
Authority
JP
Japan
Prior art keywords
type
layer
doped
impurities
luminous diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14814479A
Other languages
Japanese (ja)
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14814479A priority Critical patent/JPS5670676A/en
Publication of JPS5670676A publication Critical patent/JPS5670676A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a high brightness characteristic by bringing the concentration of the impurities of an N type GaAlAs layer to the optimum value. CONSTITUTION:A P type Ga1-XAlXAs layer 2 and an N type Ga1-YAlYAs layer 3 are formed on a P type GaAs substrate 1 by means of epitaxial growth. In said P type layer 2, carriers are doped in about 1.5X10<18>cm<-3>; in the N type layer 3, Te is doped in 2X10<17>cm<-3>-1X10<18>cm<-3> as N type impurities.
JP14814479A 1979-11-14 1979-11-14 Luminous diode Pending JPS5670676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14814479A JPS5670676A (en) 1979-11-14 1979-11-14 Luminous diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14814479A JPS5670676A (en) 1979-11-14 1979-11-14 Luminous diode

Publications (1)

Publication Number Publication Date
JPS5670676A true JPS5670676A (en) 1981-06-12

Family

ID=15446243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14814479A Pending JPS5670676A (en) 1979-11-14 1979-11-14 Luminous diode

Country Status (1)

Country Link
JP (1) JPS5670676A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856371A (en) * 1981-09-30 1983-04-04 Toshiba Corp Semiconductor light-emitting element
JPS61127699A (en) * 1984-11-26 1986-06-14 Mitsubishi Monsanto Chem Co Epitaxial wafer of gallium arsenide-aluminum mixed crystal and its manufacture

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856371A (en) * 1981-09-30 1983-04-04 Toshiba Corp Semiconductor light-emitting element
JPS61127699A (en) * 1984-11-26 1986-06-14 Mitsubishi Monsanto Chem Co Epitaxial wafer of gallium arsenide-aluminum mixed crystal and its manufacture
JPH058155B2 (en) * 1984-11-26 1993-02-01 Mitsubishi Kasei Horitetsuku Kk

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