JPS5567131A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
JPS5567131A
JPS5567131A JP13983578A JP13983578A JPS5567131A JP S5567131 A JPS5567131 A JP S5567131A JP 13983578 A JP13983578 A JP 13983578A JP 13983578 A JP13983578 A JP 13983578A JP S5567131 A JPS5567131 A JP S5567131A
Authority
JP
Japan
Prior art keywords
layer
substrate
crystal lattice
si
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13983578A
Inventor
Kazumichi Omura
Takashi Shigematsu
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP13983578A priority Critical patent/JPS5567131A/en
Publication of JPS5567131A publication Critical patent/JPS5567131A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a grown layer of very few defects, by epitaxially growing a semiconductor layer on a semiconductor substrate, projecting charged particles upon their boundary and the vicinity thereof to produce a high-density defect layer and treating the layer with heat at such a temperature that the crystal lattice is re- oriented but the layer is not molten.
CONSTITUTION: An n-type layer 12 is epitaxially grown by the pyrolysis of SiH4 under an atmosphere of POCl3 on an n+-type Si substrate 11, which is to be a collector. Charged particles 13 such as Si+ ions are projected upon the boundary between the layer 12 and the substrate 11 and the vicinity thereof to produce a high-density defect layer 14. The layer 12 is thus changed into the amorphous Si layer 14. The layer 14 is treated with heat at such a temperature by laser pulses 15 that the crystal lattice is re-oriented but the layer is not molten. As a result, the crystal lattice of the layer 14 is made similar to that of the substrate 11 and the layer 14 is changed back into a single crystal 16. A good single crystal substrate is thus obtained. When a base and an emitter regions 17, 18 are produced in the layer 16, a semiconductor device of good properties is manufactured.
COPYRIGHT: (C)1980,JPO&Japio
JP13983578A 1978-11-15 1978-11-15 Method for manufacturing semiconductor device Pending JPS5567131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13983578A JPS5567131A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13983578A JPS5567131A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5567131A true JPS5567131A (en) 1980-05-21

Family

ID=15254597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13983578A Pending JPS5567131A (en) 1978-11-15 1978-11-15 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5567131A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film

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