JPS5618000A - Vapor phase growing method for 3-5 group compound semiconductor - Google Patents
Vapor phase growing method for 3-5 group compound semiconductorInfo
- Publication number
- JPS5618000A JPS5618000A JP9338679A JP9338679A JPS5618000A JP S5618000 A JPS5618000 A JP S5618000A JP 9338679 A JP9338679 A JP 9338679A JP 9338679 A JP9338679 A JP 9338679A JP S5618000 A JPS5618000 A JP S5618000A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- vapor phase
- group compound
- compound semiconductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow a fine III-V group compound semiconductor on a mirror surface in a vapor phase at a low temp. by temporarily adding an iodide of III group element to reactive gases at the beginning of the vapor phase growth on the substrate of a III-V group compound semiconductor.
CONSTITUTION: Vapor of a chloride of III group element such as AsCl3 and vapor of a V group element such as Ga are reacted to grow a semiconductor of III-V group compound such as a GaAs semiconductor from the vapor phase on a substrate of GaAs or the like. At the beginning of the vapor phase growth an iodide of III group element iodide such as GaI is added to the reactive gases. As a result, a GaAs layer is rapidly grown on the substrate, and succeeding epitaxial growth is allowed to progress uniformly even at a low temp. In addition, in the low temp. growth, without lowering the concn. of reactive gases and changing the temp. of the substrate in the growing process a III-V group compound semiconductor can be epitaxially grown on such a mirror surface.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9338679A JPS5618000A (en) | 1979-07-23 | 1979-07-23 | Vapor phase growing method for 3-5 group compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9338679A JPS5618000A (en) | 1979-07-23 | 1979-07-23 | Vapor phase growing method for 3-5 group compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5618000A true JPS5618000A (en) | 1981-02-20 |
Family
ID=14080864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9338679A Pending JPS5618000A (en) | 1979-07-23 | 1979-07-23 | Vapor phase growing method for 3-5 group compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5618000A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199695A (en) * | 1982-04-28 | 1983-11-21 | Hitachi Plant Eng & Constr Co Ltd | Tentative fastening jig for tack welding |
| JPS6453771A (en) * | 1987-08-21 | 1989-03-01 | Hitachi Ltd | Method and equipment for welding piping |
| JPH0336387U (en) * | 1989-08-08 | 1991-04-09 |
-
1979
- 1979-07-23 JP JP9338679A patent/JPS5618000A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58199695A (en) * | 1982-04-28 | 1983-11-21 | Hitachi Plant Eng & Constr Co Ltd | Tentative fastening jig for tack welding |
| JPS6218279B2 (en) * | 1982-04-28 | 1987-04-22 | Hitachi Plant Eng & Constr Co | |
| JPS6453771A (en) * | 1987-08-21 | 1989-03-01 | Hitachi Ltd | Method and equipment for welding piping |
| JPH0336387U (en) * | 1989-08-08 | 1991-04-09 |
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