GB1370292A - Method for growing crystals - Google Patents
Method for growing crystalsInfo
- Publication number
- GB1370292A GB1370292A GB104173A GB104173A GB1370292A GB 1370292 A GB1370292 A GB 1370292A GB 104173 A GB104173 A GB 104173A GB 104173 A GB104173 A GB 104173A GB 1370292 A GB1370292 A GB 1370292A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- substrate
- burger
- grown
- vector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 11
- 238000000034 method Methods 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 abstract 8
- 235000015220 hamburgers Nutrition 0.000 abstract 4
- 230000012010 growth Effects 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1370292 Growing crystals on a substrate INTERNATIONAL BUSINESS MACHINES CORP 8 Jan 1973 [3 March 1972] 1041/73 Heading B1S Crystals are grown on a substrate, i.e. by liquid or gaseous deposition, using a substrate in which the percentage misfit between the lattice parameters of the substrate crystal and the crystal to be grown is at least equal to p b L cos # wherein p is the dislocation density, 4 b is the magnitude of Burger's vector of the misfit dislocation, # is the angle between the Burger vector and that direction in the interface which is perpendicular to the line of intersection of the slip plane and the interface and L is the length of the crystal to be grown and is chosen so that the number of dislocations therein is less than the calculated maximum, e.g. less than 0.75% at 1000C, and which has been cut at a plane determined by the slip system of the crystals as calculated graphically from sterographic projections. The crystal is grown on the substrate crystal to a thickness at least equal to (1-v) / f(1+v) cos # where f is the percentage misfit, b is the magnitude of Burger's vector, v is Poisson's ratio, and # is the angle measure from Burger's vector. In addition to vapour or gaseous growth methods such as vacuum evaporation, and sputtering, melt or solution growth methods such as crystal pulling techniques, floating zone techniques, gradient-freeze methods, and horizontal Bridgman methods may be used. Exemplified crystal growths are (i) germanium on a gallium arsenide substrate, (ii) boron doped silicon on a silicon substrate, and (iii) dislocation-free chromium films on iron substrates.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23169572A | 1972-03-03 | 1972-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1370292A true GB1370292A (en) | 1974-10-16 |
Family
ID=22870296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB104173A Expired GB1370292A (en) | 1972-03-03 | 1973-01-08 | Method for growing crystals |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3788890A (en) |
| JP (1) | JPS5720279B2 (en) |
| DE (1) | DE2310117A1 (en) |
| FR (1) | FR2174864B1 (en) |
| GB (1) | GB1370292A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1498516A1 (en) * | 2002-04-19 | 2005-01-19 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3976535A (en) * | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
| US4174422A (en) * | 1977-12-30 | 1979-11-13 | International Business Machines Corporation | Growing epitaxial films when the misfit between film and substrate is large |
| GB8325544D0 (en) * | 1983-09-23 | 1983-10-26 | Howe S H | Orienting crystals |
| JPS61151098A (en) * | 1984-12-24 | 1986-07-09 | Shin Etsu Chem Co Ltd | Single crystal wafer of lithium tantalate |
| US4908074A (en) * | 1986-02-28 | 1990-03-13 | Kyocera Corporation | Gallium arsenide on sapphire heterostructure |
| US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
| US4857415A (en) * | 1987-05-29 | 1989-08-15 | Raytheon Company | Method of producing single crystalline magnetic film having bi-axial anisotropy |
| US5156995A (en) * | 1988-04-01 | 1992-10-20 | Cornell Research Foundation, Inc. | Method for reducing or eliminating interface defects in mismatched semiconductor epilayers |
| US6730987B2 (en) * | 2001-09-10 | 2004-05-04 | Showa Denko K.K. | Compound semiconductor device, production method thereof, light-emitting device and transistor |
| GB0611926D0 (en) * | 2006-06-16 | 2006-07-26 | Rolls Royce Plc | Welding of single crystal alloys |
| US11614378B2 (en) | 2017-01-06 | 2023-03-28 | Direct-C Limited | Polymeric nanocomposite based sensor and coating systems and their applications |
-
1972
- 1972-03-03 US US00231695A patent/US3788890A/en not_active Expired - Lifetime
-
1973
- 1973-01-08 GB GB104173A patent/GB1370292A/en not_active Expired
- 1973-02-20 FR FR7306795A patent/FR2174864B1/fr not_active Expired
- 1973-02-22 JP JP2076273A patent/JPS5720279B2/ja not_active Expired
- 1973-03-01 DE DE19732310117 patent/DE2310117A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1498516A1 (en) * | 2002-04-19 | 2005-01-19 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
| EP1498516A4 (en) * | 2002-04-19 | 2008-04-23 | Komatsu Denshi Kinzoku Kk | Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2174864A1 (en) | 1973-10-19 |
| JPS48101381A (en) | 1973-12-20 |
| FR2174864B1 (en) | 1977-04-22 |
| JPS5720279B2 (en) | 1982-04-27 |
| DE2310117A1 (en) | 1973-09-06 |
| US3788890A (en) | 1974-01-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |