FR2174864A1 - - Google Patents
Info
- Publication number
- FR2174864A1 FR2174864A1 FR7306795A FR7306795A FR2174864A1 FR 2174864 A1 FR2174864 A1 FR 2174864A1 FR 7306795 A FR7306795 A FR 7306795A FR 7306795 A FR7306795 A FR 7306795A FR 2174864 A1 FR2174864 A1 FR 2174864A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/025—Deposition multi-step
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23169572A | 1972-03-03 | 1972-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2174864A1 true FR2174864A1 (en) | 1973-10-19 |
FR2174864B1 FR2174864B1 (en) | 1977-04-22 |
Family
ID=22870296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7306795A Expired FR2174864B1 (en) | 1972-03-03 | 1973-02-20 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3788890A (en) |
JP (1) | JPS5720279B2 (en) |
DE (1) | DE2310117A1 (en) |
FR (1) | FR2174864B1 (en) |
GB (1) | GB1370292A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3976535A (en) * | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
US4174422A (en) * | 1977-12-30 | 1979-11-13 | International Business Machines Corporation | Growing epitaxial films when the misfit between film and substrate is large |
GB8325544D0 (en) * | 1983-09-23 | 1983-10-26 | Howe S H | Orienting crystals |
JPS61151098A (en) * | 1984-12-24 | 1986-07-09 | Shin Etsu Chem Co Ltd | Single crystal wafer of lithium tantalate |
US4908074A (en) * | 1986-02-28 | 1990-03-13 | Kyocera Corporation | Gallium arsenide on sapphire heterostructure |
US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
US4857415A (en) * | 1987-05-29 | 1989-08-15 | Raytheon Company | Method of producing single crystalline magnetic film having bi-axial anisotropy |
US5156995A (en) * | 1988-04-01 | 1992-10-20 | Cornell Research Foundation, Inc. | Method for reducing or eliminating interface defects in mismatched semiconductor epilayers |
US6730987B2 (en) * | 2001-09-10 | 2004-05-04 | Showa Denko K.K. | Compound semiconductor device, production method thereof, light-emitting device and transistor |
JP4142332B2 (en) * | 2002-04-19 | 2008-09-03 | Sumco Techxiv株式会社 | Single crystal silicon manufacturing method, single crystal silicon wafer manufacturing method, single crystal silicon manufacturing seed crystal, single crystal silicon ingot, and single crystal silicon wafer |
GB0611926D0 (en) * | 2006-06-16 | 2006-07-26 | Rolls Royce Plc | Welding of single crystal alloys |
WO2018126326A1 (en) | 2017-01-06 | 2018-07-12 | Direct-C Limited | Polymeric nanocomposite based sensor and coating systems and their applications |
-
1972
- 1972-03-03 US US00231695A patent/US3788890A/en not_active Expired - Lifetime
-
1973
- 1973-01-08 GB GB104173A patent/GB1370292A/en not_active Expired
- 1973-02-20 FR FR7306795A patent/FR2174864B1/fr not_active Expired
- 1973-02-22 JP JP2076273A patent/JPS5720279B2/ja not_active Expired
- 1973-03-01 DE DE19732310117 patent/DE2310117A1/en active Pending
Non-Patent Citations (1)
Title |
---|
NEANT * |
Also Published As
Publication number | Publication date |
---|---|
JPS5720279B2 (en) | 1982-04-27 |
JPS48101381A (en) | 1973-12-20 |
US3788890A (en) | 1974-01-29 |
DE2310117A1 (en) | 1973-09-06 |
FR2174864B1 (en) | 1977-04-22 |
GB1370292A (en) | 1974-10-16 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |