JPS57129899A - Manufacture of single crystal of 3-5 group compound semiconductor - Google Patents

Manufacture of single crystal of 3-5 group compound semiconductor

Info

Publication number
JPS57129899A
JPS57129899A JP1320581A JP1320581A JPS57129899A JP S57129899 A JPS57129899 A JP S57129899A JP 1320581 A JP1320581 A JP 1320581A JP 1320581 A JP1320581 A JP 1320581A JP S57129899 A JPS57129899 A JP S57129899A
Authority
JP
Japan
Prior art keywords
crystal
growing
single crystal
group compound
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1320581A
Other languages
Japanese (ja)
Other versions
JPS5938187B2 (en
Inventor
Seiji Mizuniwa
Toshiya Toyoshima
Junkichi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP1320581A priority Critical patent/JPS5938187B2/en
Publication of JPS57129899A publication Critical patent/JPS57129899A/en
Publication of JPS5938187B2 publication Critical patent/JPS5938187B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a high quality single crystal of a III-V group compound semiconductor having large cross-sectional area with high reproducibility by growing the {111} face of a crystal at a specified tilt angle to a face perpendicular to the crystal growing direction.
CONSTITUTION: In the manufacture of a single crystal 4 of a III-V group compound semicondutor such as a GaAs or InP semiconductor, a seed crystal 3 is set on one end of a boat while tilting the {111} face by 5W25°, and the crystal 4 is grown using the seed crystal 3. The crystal 4 grows in the direction of an arrow 6 and proceeds into a melt 7 while forming doglegged growing interfaces 5. Since the peak of each interface 5 is a growing nucleus and the free surface of the melt 7, dislocation is hardly taken in the crystal. Separate growths are carried out at the right and left sides of the peak as a border as if 2 crystals having small cross-sectional area are grown parallel, so that high quality large- sized single crystal 4 is obtd. stably.
COPYRIGHT: (C)1982,JPO&Japio
JP1320581A 1981-01-30 1981-01-30 Method for producing Group 3-5 compound semiconductor single crystal Expired JPS5938187B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1320581A JPS5938187B2 (en) 1981-01-30 1981-01-30 Method for producing Group 3-5 compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1320581A JPS5938187B2 (en) 1981-01-30 1981-01-30 Method for producing Group 3-5 compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS57129899A true JPS57129899A (en) 1982-08-12
JPS5938187B2 JPS5938187B2 (en) 1984-09-14

Family

ID=11826649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1320581A Expired JPS5938187B2 (en) 1981-01-30 1981-01-30 Method for producing Group 3-5 compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS5938187B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115100A (en) * 1981-12-28 1983-07-08 Mitsubishi Monsanto Chem Co Preparation of single crystal of inorganic compound
US7069973B2 (en) 2001-03-21 2006-07-04 Nichibei Co., Ltd. Blind, slat for blinds, and method of producing the same and forming machine therefor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63172078U (en) * 1987-04-30 1988-11-09
JPH0547366Y2 (en) * 1988-02-18 1993-12-14

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115100A (en) * 1981-12-28 1983-07-08 Mitsubishi Monsanto Chem Co Preparation of single crystal of inorganic compound
JPH0329759B2 (en) * 1981-12-28 1991-04-25
US7069973B2 (en) 2001-03-21 2006-07-04 Nichibei Co., Ltd. Blind, slat for blinds, and method of producing the same and forming machine therefor
US7461440B2 (en) 2001-03-21 2008-12-09 Nichibei Co., Ltd. Blind, blind slat, manufacturing method of the same, and forming machine of the same

Also Published As

Publication number Publication date
JPS5938187B2 (en) 1984-09-14

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