JPS57129899A - Manufacture of single crystal of 3-5 group compound semiconductor - Google Patents
Manufacture of single crystal of 3-5 group compound semiconductorInfo
- Publication number
- JPS57129899A JPS57129899A JP1320581A JP1320581A JPS57129899A JP S57129899 A JPS57129899 A JP S57129899A JP 1320581 A JP1320581 A JP 1320581A JP 1320581 A JP1320581 A JP 1320581A JP S57129899 A JPS57129899 A JP S57129899A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growing
- single crystal
- group compound
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To grow a high quality single crystal of a III-V group compound semiconductor having large cross-sectional area with high reproducibility by growing the {111} face of a crystal at a specified tilt angle to a face perpendicular to the crystal growing direction.
CONSTITUTION: In the manufacture of a single crystal 4 of a III-V group compound semicondutor such as a GaAs or InP semiconductor, a seed crystal 3 is set on one end of a boat while tilting the {111} face by 5W25°, and the crystal 4 is grown using the seed crystal 3. The crystal 4 grows in the direction of an arrow 6 and proceeds into a melt 7 while forming doglegged growing interfaces 5. Since the peak of each interface 5 is a growing nucleus and the free surface of the melt 7, dislocation is hardly taken in the crystal. Separate growths are carried out at the right and left sides of the peak as a border as if 2 crystals having small cross-sectional area are grown parallel, so that high quality large- sized single crystal 4 is obtd. stably.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1320581A JPS5938187B2 (en) | 1981-01-30 | 1981-01-30 | Method for producing Group 3-5 compound semiconductor single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1320581A JPS5938187B2 (en) | 1981-01-30 | 1981-01-30 | Method for producing Group 3-5 compound semiconductor single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57129899A true JPS57129899A (en) | 1982-08-12 |
JPS5938187B2 JPS5938187B2 (en) | 1984-09-14 |
Family
ID=11826649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1320581A Expired JPS5938187B2 (en) | 1981-01-30 | 1981-01-30 | Method for producing Group 3-5 compound semiconductor single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5938187B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115100A (en) * | 1981-12-28 | 1983-07-08 | Mitsubishi Monsanto Chem Co | Preparation of single crystal of inorganic compound |
US7069973B2 (en) | 2001-03-21 | 2006-07-04 | Nichibei Co., Ltd. | Blind, slat for blinds, and method of producing the same and forming machine therefor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63172078U (en) * | 1987-04-30 | 1988-11-09 | ||
JPH0547366Y2 (en) * | 1988-02-18 | 1993-12-14 |
-
1981
- 1981-01-30 JP JP1320581A patent/JPS5938187B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115100A (en) * | 1981-12-28 | 1983-07-08 | Mitsubishi Monsanto Chem Co | Preparation of single crystal of inorganic compound |
JPH0329759B2 (en) * | 1981-12-28 | 1991-04-25 | ||
US7069973B2 (en) | 2001-03-21 | 2006-07-04 | Nichibei Co., Ltd. | Blind, slat for blinds, and method of producing the same and forming machine therefor |
US7461440B2 (en) | 2001-03-21 | 2008-12-09 | Nichibei Co., Ltd. | Blind, blind slat, manufacturing method of the same, and forming machine of the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5938187B2 (en) | 1984-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1533099A (en) | Method for producing a lithium tantalate single crystal | |
JPS57129899A (en) | Manufacture of single crystal of 3-5 group compound semiconductor | |
GB1370292A (en) | Method for growing crystals | |
Cockayne et al. | Control of dislocation structures in LEC single crystal InP | |
EP0284437A3 (en) | Iii - v group compound crystal article and process for producing the same | |
JPS56109896A (en) | Semiconductor single crystal and its growing method | |
JPS5717494A (en) | Manufacture of single crystal | |
JPS5618000A (en) | Vapor phase growing method for 3-5 group compound semiconductor | |
JPS56149399A (en) | Liquid phase epitaxial growing method | |
JPS54109080A (en) | Crystal-growing method by limited-edge-crystal growing method | |
JPS5587423A (en) | Semiconductor device | |
JPS57155727A (en) | Manufacture of semiconductor device | |
JPS57200288A (en) | Liquid-phase growing method | |
JPS57160999A (en) | Manufacture of single crystal | |
JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
JPS57200297A (en) | Preparation of gaas single crystal with low dislocation density | |
JPS57196523A (en) | Growing method of semiconductor | |
JPS54107883A (en) | Crystal-growing die for use in growing crystal with limited edge | |
JPS6129121A (en) | Gaas liquid phase epitaxial growth method | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS5738399A (en) | Manufacture of lead molybdate single crystal | |
Randolph | The outlook for space produced III-V crystals | |
JPS5575272A (en) | Solar battery | |
JPH0359014A (en) | Epitaxial growth of diacetylene or polydiacetylene | |
JPS57166393A (en) | Preparation of single crystal |